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TLE2082IP

更新时间： 2024-11-24 22:38:23
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德州仪器 - TI 运算放大器放大器电路输入元件
页数 文件大小 规格书
69页 1129K
描述
EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS

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中文翻译

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TLE2082IP 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIP
包装说明：DIP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：1.35
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：182620Samacsys Pin Count：8
Samacsys Part Category：Integrated CircuitSamacsys Package Category：Dual-In-Line Packages
Samacsys Footprint Name：P (R-PDIP-T8)Samacsys Released Date：2015-06-24 00:00:00
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.000175 µA
25C 时的最大偏置电流 (IIB)：0.000175 µA最小共模抑制比：80 dB
标称共模抑制比：98 dB频率补偿：YES
最大输入失调电流 (IIO)：0.00095 µA最大输入失调电压：6000 µV
JESD-30 代码：R-PDIP-T8JESD-609代码：e4
长度：9.81 mm低-偏置：YES
低-失调：NO微功率：NO
负供电电压上限：-19 V标称负供电电压 (Vsup)：-5 V
功能数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE包装方法：TUBE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：+-5/+-15 V可编程功率：NO
认证状态：Not Qualified座面最大高度：5.08 mm
最小摆率：22 V/us标称压摆率：40 V/us
子类别：Operational Amplifier最大压摆率：1.95 mA
供电电压上限：19 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：BIFET
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：10000 kHz最小电压增益：8912.5
宽带：NO宽度：6.35 mm
Base Number Matches：1

TLE2082IP 数据手册

 浏览型号TLE2082IP的Datasheet PDF文件第2页浏览型号TLE2082IP的Datasheet PDF文件第3页浏览型号TLE2082IP的Datasheet PDF文件第4页浏览型号TLE2082IP的Datasheet PDF文件第5页浏览型号TLE2082IP的Datasheet PDF文件第6页浏览型号TLE2082IP的Datasheet PDF文件第7页 
TLE208x, TLE208xA, TLE208xY  
EXCALIBUR HIGH-SPEED JFET-INPUT  
OPERATIONAL AMPLIFIERS  
SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000  
Direct Upgrades to TL05x, TL07x, and  
TL08x BiFET Operational Amplifiers  
On-Chip Offset Voltage Trimming for  
Improved DC Performance  
Greater Than 2× Bandwidth (10 MHz) and  
3× Slew Rate (45 V/µs) Than TL08x  
Wider Supply Rails Increase Dynamic  
Signal Range to ±19 V  
description  
The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew  
rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider  
supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming  
of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are  
pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in  
existing designs.  
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without  
sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for  
interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac  
response than bipolar or CMOS devices having comparable power consumption.  
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to  
observe common-mode input-voltage limits and output voltage swing when operating from a single supply. DC  
biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply.  
Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from  
single supplies.  
The TLE208x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems,  
Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended.  
When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth  
requirements and output loading.  
For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response as  
the TLE208x with more stringent dc and noise specifications.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 2000, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...69

中文翻译

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TLE2082IP 替代型号

型号 品牌 替代类型 描述 数据表
TLE2082IPE4 TI

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