是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.92 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.06 µA |
25C 时的最大偏置电流 (IIB): | 0.000175 µA | 标称共模抑制比: | 89 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.0075 µA |
最大输入失调电压: | 9500 µV | JESD-30 代码: | R-GDIP-T8 |
长度: | 9.58 mm | 低-偏置: | YES |
低-失调: | NO | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-5/+-15 V |
认证状态: | Not Qualified | 筛选级别: | 38535Q/M;38534H;883B |
座面最大高度: | 5.08 mm | 最小摆率: | 20 V/us |
标称压摆率: | 38 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 3.4 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | BIFET | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 9400 kHz | 最小电压增益: | 14000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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