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TLDR4900-BT12Z PDF预览

TLDR4900-BT12Z

更新时间: 2024-11-09 15:54:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 143K
描述
Visible LED, Clear

TLDR4900-BT12Z 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.77
Is Samacsys:N颜色@波长:Red
最大正向电流:0.05 A最大正向电压:2.2 V
透镜类型:CLEAR最高工作温度:100 °C
最低工作温度:-40 °C总高度:4.8 mm
峰值波长:650 nm最大反向电压:6 V
子类别:Visible LEDs视角:32 deg
Base Number Matches:1

TLDR4900-BT12Z 数据手册

 浏览型号TLDR4900-BT12Z的Datasheet PDF文件第2页浏览型号TLDR4900-BT12Z的Datasheet PDF文件第3页浏览型号TLDR4900-BT12Z的Datasheet PDF文件第4页浏览型号TLDR4900-BT12Z的Datasheet PDF文件第5页 
TLDR490.  
Vishay Semiconductors  
VISHAY  
High Intensity LED in 3 mm Clear Package  
Description  
This LED contains the double heterojunction (DH)  
GaAlAs on GaAs technology.  
This deep red LED can be utilized over a wide range  
of drive current. It can be DC or pulse driven to  
achieve desired light output.  
The device is available in a clear 3 mm package.  
Features  
• Exceptional brightness  
• Very high intensity even at low drive currents  
• Small viewing angle  
Applications  
Bright ambient lighting conditions  
• Low forward voltage  
• 3 mm (T-1) untinted non-diffused package  
• Deep red color  
Battery powered equipment  
Indoor and outdoor information displays  
Portable equipment  
• Categorized for luminous intensity  
• Outstanding material efficiency  
• Lead-free device  
Telecommunication indicators  
General use  
Parts Table  
Part  
Color, Luminous Intensity  
Red, I > 63 mcd  
Angle of Half Intensity ( ϕ)  
16 °  
16 °  
Technology  
TLDR4900  
TLDR4901  
GaAIAs on GaAs  
GaAIAs on GaAs  
V
Red, I = (63 to 200) mcd  
V
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
TLDR490.  
Parameter  
Test condition  
Symbol  
Value  
Unit  
V
Reverse voltage  
V
6
R
DC Forward current  
I
50  
mA  
A
F
Surge forward current  
Power dissipation  
t
10 µs  
I
1
100  
p
FSM  
T
60 °C  
P
mW  
°C  
amb  
V
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
T
100  
j
T
- 40 to + 100  
- 55 to + 100  
260  
°C  
amb  
T
°C  
stg  
t 5 s, 2 mm from body  
T
°C  
sd  
Thermal resistance junction/  
ambient  
R
400  
K/W  
thJA  
Document Number 83002  
Rev. 1.3, 21-Jul-04  
www.vishay.com  
1

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