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TLC339CN10 PDF预览

TLC339CN10

更新时间： 2024-11-02 03:14:19
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
17页 259K
描述
LinCMOSE MICROPOWER QUAD COMPARATORS

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TLC339CN10 技术参数

是否无铅： 含铅生命周期：Obsolete
零件包装代码：DIP包装说明：PLASTIC, DIP-14
针数：14Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.65放大器类型：COMPARATOR
最大平均偏置电流 (IIB)：0.0006 µA最大输入失调电压：6500 µV
JESD-30 代码：R-PDIP-T14长度：19.305 mm
功能数量：4端子数量：14
最高工作温度：70 °C最低工作温度：
输出类型：OPEN-DRAIN封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP14,.3
封装形状：RECTANGULAR封装形式：IN-LINE
电源：5 V认证状态：Not Qualified
标称响应时间：2500 ns座面最大高度：5.08 mm
子类别：Comparator最大压摆率：0.1 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：DUAL
宽度：7.62 mmBase Number Matches：1

TLC339CN10 数据手册

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TLC139, TLC339, TLC339Q  
LinCMOS MICROPOWER QUAD COMPARATORS  
SLCS119 – DECEMBER 1986 – REVISED JANUARY 1991  
D, J OR N PACKAGE  
(TOP VIEW)  
Very Low Power . . . 200 µW Typ at 5 V  
Fast Response Time . . . 2.5 µs Typ With  
5-mV Overdrive  
1OUT  
2OUT  
3OUT  
4OUT  
GND  
4IN+  
4IN–  
3IN+  
3IN–  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
Single Supply Operation:  
TLC139M . . . 4 V to 16 V  
TLC339M . . . 4 V to 16 V  
TLC339C . . . 3 V to 16 V  
TLC339I . . . 3 V to 16 V  
V
DD  
2IN–  
2IN+  
1IN–  
1IN+  
12  
High Input Impedance . . . 10 Ω Typ  
8
Input Offset Voltage Change at Worst Case  
Input at Condition Typically 0.23 µV/Month  
Including the First 30 Days  
FK PACKAGE  
(TOP VIEW)  
On-Chip ESD Protection  
description  
3
2
1
20 19  
18  
GND  
V
The  
TLC139/TLC339  
consists  
of  
four  
4
5
6
7
8
DD  
NC  
NC  
2IN–  
NC  
independent differential-voltage comparators  
designed to operate from a single supply. It is  
functionallysimilartotheLM139/LM339familybut  
uses 1/20th the power for similar response times.  
The open-drain MOS output stage interfaces to a  
variety of leads and supplies, as well as wired  
logic functions. For a similar device with a  
push-pull output configuration, see the TLC3704  
data sheet.  
17  
16  
15  
14  
4IN+  
NC  
4IN–  
2IN+  
9 10 11 12 13  
NC – No internal connection  
TheTexasInstrumentsLinCMOS processoffers  
superior analog performance to standard CMOS  
processes. Along with the standard CMOS  
advantages of low power without sacrificing  
speed, high input impedance, and low bias  
symbol (each comparator)  
IN+  
IN–  
OUT  
currents, the LinCMOS  
process offers  
extremely stable input offset voltages, even with  
differential input stresses of several volts. This  
characteristic makes it possible to build reliable  
CMOS comparators.  
AVAILABLE OPTIONS  
PACKAGE  
CHIP CARRIER  
V
max  
IO  
T
A
SMALL OUTLINE  
(D)  
CERAMIC DIP  
(J)  
PLASTIC DIP  
(P)  
AT 25°C  
(FK)  
0°C to 70°C  
–40°C to 85°C  
–40°C to 125°C  
–55°C to 125°C  
5 mV  
5 mV  
5 mV  
5 mV  
TLC339CD  
TLC339ID  
TLC339QD  
TLC339MD  
—
—
TLC339CN  
TLC339IN  
TLC339QN  
TLC339MN  
—
—
—
—
TLC139MFK  
TLC139MJ  
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC339CDR).  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1991, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...17

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