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TLC252BCDG4 PDF预览

TLC252BCDG4

更新时间: 2024-11-23 15:54:27
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
29页 550K
描述
DUAL OP-AMP, 3000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, SOIC-8

TLC252BCDG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:GREEN, PLASTIC, SOIC-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.31
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00006 µA25C 时的最大偏置电流 (IIB):0.00006 µA
最小共模抑制比:65 dB标称共模抑制比:80 dB
频率补偿:YES最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:NO
湿度敏感等级:1功能数量:2
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
功率:NO电源:1.4/16 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:3.6 V/us
子类别:Operational Amplifier最大压摆率:4.4 mA
供电电压上限:18 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:1700 kHz最小电压增益:10000
宽带:NO宽度:3.9 mm
Base Number Matches:1

TLC252BCDG4 数据手册

 浏览型号TLC252BCDG4的Datasheet PDF文件第2页浏览型号TLC252BCDG4的Datasheet PDF文件第3页浏览型号TLC252BCDG4的Datasheet PDF文件第4页浏览型号TLC252BCDG4的Datasheet PDF文件第5页浏览型号TLC252BCDG4的Datasheet PDF文件第6页浏览型号TLC252BCDG4的Datasheet PDF文件第7页 
TLC252, TLC252A, TLC252B, TLC252Y, TLC25L2, TLC25L2A, TLC25L2B  
TLC25L2Y, TLC25M2, TLC25M2A, TLC25M2B, TLC25M2Y  
LinCMOS DUAL OPERATIONAL AMPLIFIERS  
SLOS002I – JUNE 1983 – REVISED MARCH 2001  
D, P, OR PW PACKAGE  
A-Suffix Versions Offer 5-mV V  
IO  
IO  
(TOP VIEW)  
B-Suffix Versions Offer 2-mV V  
Wide Range of Supply Voltages  
1.4 V to 16 V  
1OUT  
1IN–  
1IN+  
/GND  
V
DD  
1
2
3
4
8
7
6
5
2OUT  
2IN–  
2IN+  
True Single-Supply Operation  
V
DD–  
Common-Mode Input Voltage Includes the  
Negative Rail  
Low Noise . . . 30 nV/Hz Typ at f = 1 kHz  
(High-Bias Versions)  
symbol (each amplifier)  
description  
+
IN+  
IN–  
The TLC252, TLC25L2, and TLC25M2 are  
low-cost, low-power dual operational amplifiers  
designed to operate with single or dual supplies.  
These devices utilize the Texas Instruments  
OUT  
silicon gate LinCMOS process, giving them stable input offset voltages that are available in selected grades  
of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents.  
Because the input common-mode range extends to the negative rail and the power consumption is extremely  
low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers  
operation down to a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.  
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures  
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised  
in handling these devices as exposure to ESD may result in a degradation of the device parametric  
performance.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(P)  
TSSOP  
(PW)  
AT 25°C  
TLC252Y  
10 mV  
5 mV  
2 mV  
TLC252CD  
TLC252ACD  
TLC252BCD  
TLC252CP  
TLC252ACP  
TLC252BCP  
TLC252CPW  
TLC252ACPW  
TLC252BCPW  
TLC25L2Y  
10 mV  
5 mV  
2 mV  
TLC25L2CD  
TLC25L2ACD  
TLC25L2BCD  
TLC25L2CP  
TLC25L2ACP  
TLC25L2BCP  
TLC25L2CPW  
TLC25L2ACPW  
TLC25L2BCPW  
0°C to 70°C  
10 mV  
5 mV  
2 mV  
TLC25M2CD  
TLC25M2ACD  
TLC25M2BCD  
TLC25M2CP  
TLC25M2ACP  
TLC25M2BCP  
TLC25M2Y  
TheD package is available taped and reeled. Add the suffix R to the device type (e.g., TLC252CDR). Chips are tested at25°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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