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TL052AID

更新时间： 2024-11-10 22:42:11
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
65页 1019K
描述
ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

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TL052AID 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：0.75Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.0002 µA25C 时的最大偏置电流 (IIB)：0.0002 µA
最小共模抑制比：75 dB标称共模抑制比：93 dB
频率补偿：YES最大输入失调电流 (IIO)：0.01 µA
最大输入失调电压：800 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
低-偏置：YES低-失调：NO
微功率：NO湿度敏感等级：1
负供电电压上限：-18 V标称负供电电压 (Vsup)：-5 V
功能数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TUBE
峰值回流温度（摄氏度）：260功率：NO
电源：+-5/+-15 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.75 mm
最小摆率：8 V/us标称压摆率：20 V/us
子类别：Operational Amplifier最大压摆率：3.2 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BIPOLAR
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：3300 kHz最小电压增益：50000
宽带：NO宽度：3.9 mm
Base Number Matches：1

TL052AID 数据手册

 浏览型号TL052AID的Datasheet PDF文件第2页浏览型号TL052AID的Datasheet PDF文件第3页浏览型号TL052AID的Datasheet PDF文件第4页浏览型号TL052AID的Datasheet PDF文件第5页浏览型号TL052AID的Datasheet PDF文件第6页浏览型号TL052AID的Datasheet PDF文件第7页 
TL05x, TL05xA, TL05xY  
ENHANCED-JFET LOW-OFFSET  
OPERATIONAL AMPLIFIERS  
SLOS178 – FEBRUARY 1997  
Direct Upgrades to TL07x and TL08x BiFET  
Operational Amplifiers  
On-Chip Offset Voltage Trimming for  
Improved DC Performance and Precision  
Grades Are Available (1.5 mV, TL051A)  
Faster Slew Rate (20 V/µs Typ) Without  
Increased Power Consumption  
Available in TSSOP for Small Form-Factor  
Designs  
description  
The TL05x series of JFET-input operational amplifiers offers improved dc and ac characteristics over the TL07x  
and TL08x families of BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision  
grades as low as 1.5 mV (TL051A) for greater accuracy in dc-coupled applications. Texas Instruments improved  
BiFET process and optimized designs also yield improved bandwidth and slew rate without increased power  
consumption. The TL05x devices are pin-compatible with the TL07x and TL08x and can be used to upgrade  
existing circuits or for optimal performance in new designs.  
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without  
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with  
high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than  
bipolar or CMOS devices having comparable power consumption.  
The TL05x family was designed to offer higher precision and better ac response than the TL08x with the low  
noise floor of the TL07x. Designers requiring significantly faster ac response or ensured lower noise should  
consider the Excalibur TLE208x and TLE207x families of BiFET operational amplifiers.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
CHIP  
V
max  
CHIP  
CARRIER  
(FK)  
CERAMIC  
DIP  
CERAMIC  
DIP  
PLASTIC  
DIP  
PLASTIC  
DIP  
IO  
SMALL  
OUTLINE  
(D)  
‡
FORM  
(Y)  
T
A
AT 25°C  
†
(J)  
(JG)  
(N)  
(P)  
TL051ACD  
TL052ACD  
TL051ACP  
TL052ACP  
800 µV  
—
—
—
—
TL051Y  
TL052Y  
TL054Y  
TL051CD  
TL052CD  
TL054ACD  
TL051CP  
TL052CP  
0°C to 70°C  
1.5 mV  
—
—
—
TL054ACN  
4 mV  
TL054CD  
—
—
—
—
—
—
TL054CN  
—
—
TL051AID  
TL052AID  
TL051AIP  
TL052AIP  
800 µV  
TL051ID  
TL052ID  
TL054AID  
TL051IP  
TL052IP  
–40°C to 85°C  
–55°C to 125°C  
—
—
1.5 mV  
—
—
—
—
—
—
TL054AIN  
4 mV  
TL054ID  
TL054IN  
—
—
TL051AMFK  
TL052AMFK  
TL051AMD  
TL052AMD  
TL051AMJG  
TL052AMJG  
TL051AMP  
TL052AMP  
800 µV  
TL051MD  
TL052MD  
TL054AMD TL054AMFK  
TL051MFK  
TL052MFK  
TL051MP  
TL052MP  
TL051MJG  
TL052MJG  
1.5 mV  
4 mV  
TL054AMJ  
TL054MJ  
TL054AMN  
TL054MN  
TL054MD TL054MFK  
—
—
†
‡
The D packages are available taped and reeled. Add R suffix to device type (e.g., TL054CDR).  
Chip forms are tested at 25°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...65

中文翻译

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TL052AID 替代型号

型号 品牌 替代类型 描述 数据表
TL052ACDR TI

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 ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS
TL052CD TI

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 ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS
TL052ACD TI

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 ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS

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