Datasheet > TK30J25D

TK30J25D

更新时间： 2024-01-10 07:40:03

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
9页	236K
描述
Switching Voltage Regulators

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TK30J25D 数据手册

TK30J25D

MOSFETs Silicon N-Channel MOS (π-MOS)

TK30J25D

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ.)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)

(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

1: Gate (G)

2: Drain (D)(Heatsink)

3: Source (S)

TO-3P(N)

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

250

Unit

Drain-source voltage

VDSS

Gate-source voltage

Drain current (DC)

VGSS

±20

(Note 1)

Drain current (pulsed)

Power dissipation

IDP

120

260

448

(Tc = 25)

Single-pulse avalanche energy

(Note 2)

EAS

Avalanche current

(Note 3)

(Note 1)

IAR

IDR

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

IDRP

Tch

120

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2011-10-05

Rev.2.0

12 3 4 5 6 7...9

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