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TK31N60W5 PDF预览

TK31N60W5

更新时间: 2024-11-06 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 244K
描述
N-ch MOSFET, 600 V, 0.099 Ω@10V, TO-247, DTMOSⅣ

TK31N60W5 数据手册

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TK31N60W5  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK31N60W5  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Fast reverse recovery time: trr = 135 ns (typ.)  
(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.)  
by used to Super Junction Structure : DTMOS  
(3) Easy to control Gate switching  
(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (Heatsink)  
3: Source  
TO-247  
Start of commercial production  
2013-10  
2014-02-25  
Rev.2.0  
1

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