Datasheet > TK15J50D(F)

TK15J50D(F)

更新时间： 2024-10-02 21:16:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	179K
描述
Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3PN

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TK15J50D(F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	2.26
Base Number Matches：	1

TK15J50D(F) 数据手册

TK15J50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK15J50D

Switching Regulator Applications

Unit: mm

15.9 MAX.

Ф3.2 ± 0.2

•

Low drain-source ON resistance: R

High forward transfer admittance: ⎪Y ⎪ = 8.0 S (typ.)

= 0.33 Ω (typ.)

DS (ON)

Low leakage current: I

= 10 μA (max) (V

= 500 V)

DSS

Enhancement-mode: V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

2.0 ± 0.3

Absolute Maximum Ratings (Ta = 25°C)

＋0.3

1.0

－0.25

Characteristics

Drain-source voltage

Symbol

Rating

Unit

5.45 ± 0.2

500

±30

DSS

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (Note 1)

1: Gate

Drain power dissipation (Tc = 25°C)

2: Drain (Heatsink)

3: Source

210

Single pulse avalanche energy

360

(Note 2)

JEDEC

⎯

Avalanche current

JEITA

SC-65

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

150

Weight : 4.6 g (typ.)

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Internal Connection

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.595

°C/W

th (ch-c)

th (ch-a)

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 2.72 mH, R = 25 Ω, I = 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2011-04-25

12 3 4 5 6

中文翻译

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