TK15J60U(F)

更新时间： 2024-01-30 10:39:59

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东芝 - TOSHIBA		晶体稳压器开关晶体管功率场效应晶体管局域网
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TK15J60U(F) 数据手册

TK15J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

TK15J60U

Switching Regulator Applications

Unit: mm

15.9 MAX.

Ф3.2 ± 0.2

•

Low drain-source ON-resistance: R

High forward transfer admittance: ⎪Y ⎪ = 8.5 S (typ.)

= 0.24Ω (typ.)

DS (ON)

Low leakage current: I

= 100 μA (V

= 600 V)

DSS

Enhancement-mode: V = 3.0 to 5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

2.0 ± 0.3

＋0.3

1.0

Characteristics

Drain-source voltage

Symbol

Rating

Unit

－0.25

600

±30

DSS

5.45 ± 0.2

Gate-source voltage

GSS

(Note 1)

Drain current

Pulse (t = 1 ms)

170

(Note 1)

1. Gate

2. Drain(heat sink)

3. Source

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

(Note 2)

JEDEC

⎯

Avalanche current

(Note 3)

JEITA

SC-65

2-16C1B

Repetitive avalanche energy

Channel temperature

°C

TOSHIBA

150

Weight : 4.6 g (typ.)

Storage temperature range

−55 to 150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.735

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 0.63 mH, R = 25Ω, I

= 15 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2008-06-11

12 3 4 5 6

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