TK15J50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK15J50D
Switching Regulator Applications
Unit: mm
15.9 MAX.
Ф3.2 ± 0.2
•
•
•
•
Low drain-source ON resistance: R
High forward transfer admittance: ⎪Y ⎪ = 8.0 S (typ.)
= 0.33 Ω (typ.)
DS (ON)
fs
Low leakage current: I
= 10 μA (max) (V
= 500 V)
DSS
DS
Enhancement-mode: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
2.0 ± 0.3
Absolute Maximum Ratings (Ta = 25°C)
+0.3
1.0
-0.25
Characteristics
Drain-source voltage
Symbol
Rating
Unit
5.45 ± 0.2
5.45 ± 0.2
V
V
500
±30
15
V
V
DSS
Gate-source voltage
GSS
DC
(Note 1)
I
D
1
2
3
Drain current
A
Pulse (Note 1)
I
60
DP
1: Gate
Drain power dissipation (Tc = 25°C)
2: Drain (Heatsink)
3: Source
P
210
W
D
AS
AR
Single pulse avalanche energy
E
360
mJ
(Note 2)
JEDEC
⎯
Avalanche current
I
15
21
A
JEITA
SC-65
2-16C1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
TOSHIBA
T
ch
150
Weight : 4.6 g (typ.)
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.595
50
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 2.72 mH, R = 25 Ω, I = 15 A
1
V
DD
ch
G
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2011-04-25