Datasheet > TJ120F06J3(TE24L,Q)

TJ120F06J3(TE24L,Q)

更新时间： 2024-11-08 10:27:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	217K
描述
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,120A I(D),TO-263ABVAR

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TJ120F06J3

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)

TJ120F06J3

Chopper Regulator, DC-DC Converter Applications

Unit: mm

Motor Drive Applications

10.0 ± 0.3

9.5 ± 0.2

0.4 ± 0.1

•

Low drain-source ON resistance: R

= 5.5 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 110 S (typ.)

Low leakage current: I

= −10 μA (max) (V

= −60 V)

DSS

1.1

Enhancement-model: V = −1.5 to −3.0 V (V

= −10 V, I = −1 mA)

0.76 ± 0.1

1.4 ± 0.1

2.35 ± 0.1

0.4 ± 0.1

Absolute Maximum Ratings (Ta = 25°C)

2.54 ± 0.25

2.34 ± 0.25

Characteristics

Drain-source voltage

Symbol

Rating

Unit

−60

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

1. GATE

2. DRAIN

（HEAT SINK）

(Note 1)

−120

−360

300

3. SOURSE

Drain current

8.0

Pulse (Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

⎯

Single pulse avalanche energy

608

(Note 2)

TOSHIBA

2-10W1A

Avalanche current

−120

Weight: 1.07 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature (Note 4)

Storage temperature range (Note 4)

°C

175

−55 to 175

stg

Thermal Characteristics

Characteristics

Symbol

Max

0.5

Unit

Thermal resistance, channel to case

°C/W

th (ch-c)

Note 1: Please use devises on condition that the channel temperature is below 175°C.

Note 2: = −25 V, T = 25°C (Initial), L = 57 μH, R = 25 Ω, I = −120 A

Note 3: Repetitive rating; pulse width limited by maximum channel temperature.

Note 4: The definitions of the absolute maximum channel temperature and storage temperatures are based on

AEC-Q101.

Note 5: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device. Please handle with caution

2009-04-17

12 3 4 5 6 7

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