Datasheet > TJ10S04M3L

TJ10S04M3L

更新时间： 2024-11-08 14:56:51

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

TJ10S04M3L 数据手册

TJ10S04M3L

MOSFETs Silicon P-Channel MOS (U-MOS)

TJ10S04M3L

1. Applications

•

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V)

(3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

(4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

Start of commercial production

2011-03

2020-06-24

Rev.6.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
TJ11016200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
TJ11019200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
TJ11112200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TJ11118200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,
TJ11313200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TJ11314200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
TJ11516200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
TJ11518200J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block, 20A, 2.5mm2, 1 Row(s), 1 Deck(s), ROHS COMPLIANT
TJ11518400J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,
TJ11518600J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block,