5秒后页面跳转
TIP50G PDF预览

TIP50G

更新时间: 2024-11-23 08:48:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关高压PC局域网
页数 文件大小 规格书
6页 154K
描述
High Voltage NPN Silicon Power Transistors

TIP50G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.64
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:171088Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220 CASE221A-09Samacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N其他特性:LEADFORM OPTIONS ARE AVAILABLE
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):40 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

TIP50G 数据手册

 浏览型号TIP50G的Datasheet PDF文件第2页浏览型号TIP50G的Datasheet PDF文件第3页浏览型号TIP50G的Datasheet PDF文件第4页浏览型号TIP50G的Datasheet PDF文件第5页浏览型号TIP50G的Datasheet PDF文件第6页 
TIP47G, TIP48G, TIP50G  
High Voltage NPN Silicon  
Power Transistors  
This series is designed for line operated audio output amplifier,  
SWITCHMODEt power supply drivers and other switching  
applications.  
http://onsemi.com  
Features  
250 V to 400 V (Min) V  
CEO(sus)  
1.0 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250300400 VOLTS  
40 WATTS  
1 A Rated Collector Current  
Popular TO220 Plastic Package  
These Devices are PbFree and are RoHS Compliant*  
MAXIMUM RATINGS  
Rating  
Symbol TIP47 TIP48 TIP50 Unit  
MARKING  
DIAGRAM  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current  
V
250  
350  
300  
400  
5.0  
400  
500  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
4
V
EB  
I
C
TIPxxG  
AYWW  
1.0  
2.0  
Continuous  
Peak  
TO220AB  
CASE 221A  
STYLE 1  
Base Current  
I
B
0.6  
Adc  
1
Total Power Dissipation  
P
D
2
3
@ T = 25_C  
40  
0.32  
C
W
W/_C  
Derate above 25_C  
TIPxx  
xx  
A
Y
WW  
G
= Device Code  
= 47, 48, or 50  
Total Power Dissipation  
P
D
@ T = 25_C  
2.0  
0.016  
= Assembly Location  
= Year  
C
W
Derate above 25_C  
W/_C  
mJ  
= Work Week  
Unclamped Inducting Load  
Energy (See Figure 8)  
E
20  
= PbFree Package  
Operating and Storage  
Junction Temperature Range  
T , T  
65 to +150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
JunctiontoCase  
R
3.125  
°C/W  
q
JC  
Thermal Resistance,  
JunctiontoAmbient  
R
q
JA  
62.5  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 Rev. 8  
TIP47/D  

TIP50G 替代型号

型号 品牌 替代类型 描述 数据表
TIP50 FAIRCHILD

完全替代

High Voltage and Switching Applications
TIP50TU ONSEMI

类似代替

1.0 A, 400 V NPN Bipolar Power Transistor
TIP50 ONSEMI

类似代替

POWER TRANSISTORS NPN SILICON

与TIP50G相关器件

型号 品牌 获取价格 描述 数据表
TIP50J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP50L MOTOROLA

获取价格

1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP50LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP50N MOTOROLA

获取价格

1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP50S MOTOROLA

获取价格

1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP50TU FAIRCHILD

获取价格

High Voltage and Switching Applications
TIP50TU ONSEMI

获取价格

1.0 A, 400 V NPN Bipolar Power Transistor
TIP50U MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP50U2 MOTOROLA

获取价格

1A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP50UA MOTOROLA

获取价格

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast