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TIP42C-TO-220 PDF预览

TIP42C-TO-220

更新时间: 2024-11-18 03:59:43
品牌 Logo 应用领域
友顺 - UTC 晶体晶体管局域网
页数 文件大小 规格书
2页 115K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

TIP42C-TO-220 数据手册

 浏览型号TIP42C-TO-220的Datasheet PDF文件第2页 
UTCTIP42C  
PNPEPITAXIAL PLANAR TRANSISTOR  
PNP EPITAXIAL PLANAR  
TRANSISTOR  
DESCRIPTION  
The UTC TIP42C is a PNP epitaxial planar transistor,  
designed for using in general purpose amplifier and switching  
applications.  
1
FEATURE  
*Complement to tip41C  
TO-220  
1:BASE 2:COLLECTOR 3:EMITTER  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
VALUE  
UNIT  
V
V
V
A
A
A
Collector Base Voltage  
Collector to Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulse)  
Base Current  
-100  
-100  
-5  
-6  
-10  
Ic  
IB  
-2  
Collector Dissipation(Tc=25°C)  
Collector Dissipation(Ta=25°C)  
Junction Temperature  
Storage Temperature  
Pc  
Pc  
Tj  
Tstg  
65  
2
150  
W
W
°C  
°C  
-65 ~ +150  
ELECTRICAL CHARACTERISTICS(Tc=25°C)  
PARAMETER  
Collector Emitter Sustaining voltage(*)  
Collector cutoff Current  
SYMBOL  
BVCEO  
ICEO  
TEST CONDITIONS  
MIN  
-100  
TYP MAX UNIT  
V
IC=-30mA,IB=0  
VCE=-60V,IB=0  
VCE=-100V,VEB=0  
VBE=-5V,Ic=0  
IC=-6A,IB=-600mA  
IC=-6A,VCE=-4V  
IC=-300mA,VCE=-4V  
IC=-3A,VCE=-4V  
VCE=-10V,Ic=-500mA,  
f=1MHz  
-0.7  
-400  
-1  
-1.5  
-2.0  
mA  
µA  
mA  
V
Collector Cutoff Current  
Emitter Cutoff current  
Collector-Emitter Saturation Voltage(*)  
Base-Emitter On Voltage(*)  
DC Current Gain(*)  
ICES  
IEBO  
VCE(sat)  
VBE(on)  
hFE  
V
30  
15  
3
75  
Current gain Bandwidth Product  
fT  
MHz  
*Pulse Test: PW<=300µs, Duty Cycle<=2%  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R203-007,A  

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