Datasheet > TIP47

TIP47

更新时间： 2024-09-25 08:48:35

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	156K
描述
NPN Silicon Power Transistors

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中文翻译

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TIP47 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

TIP47

Micro Commercial Components

Features

•

Lead Free Finish/RoHS Compliant(Note 1)("P" Suffix designates

NPN Silicon

Power Transistors

RoHS Compliant. See ordering information)

Silicon Power NPN transistors in TO-220 package.

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

•

^·Maximum Ratings

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Rating

350

250

5.0

Unit

TO-220

1.0

I_CM

I_B

Collector Current Peak

Base Current

2.0

0.6

Collector power dissipation(T_C=25^oC)

Collector power dissipation(T_A=25^oC)

Junction Temperature

Storage Temperature

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

P_D

T_J

-65 to +150

3.125

^OC

^oC/W

T_STG

R _thjc

R _thja

62.5

Electrical Characteristics @ 25^OC Unless Otherwise Specified

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

Symbol

Parameter

Min

Max

Units

V_CEO(SUS)Collector-Emitter Sustaining Voltage

Ic=30mA;I_B=0

250

---

Vdc

DIMENSIONS

V_CE(Sat)

V_BE(ON)

I_CES

Collector-Emitter Saturation Voltage

1.0

1.5

---

Vdc

INCHES

Ic=1A;I_B=0.2A

MIN

14.22

9.65

MAX

15.88

10.67

NOTE

DIM

MIN

MAX

.625

Base-Emitter On Voltage

Ic=1A;V_CE=10V

Collector Cutoff Current

(V_CE=350Vdc,V_BE=0)

.560

.380

.140

.420

.190

1.0

mAdc

3.56

4.82

.020

.139

.190

---

.045

.161

.110

.250

.025

0.51

3.53

2.29

---

1.14

4.09

2.79

6.35

0.64

∅

I_EBO

I_CEO

h_FE-1

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

Collector Cutoff Current

(V_CE=150Vdc;I_B=0)

---

1.0

150

mAdc

.012

0.30

.500

.045

.580

.060

12.70

1.14

14.73

1.52

DC Current Gain

.190

.210

4.83

5.33

(I_C=0.3Adc, V_CE=10Vdc)

.100

.080

.045

.230

-----

.135

.115

.055

.270

.050

-----

2.54

2.04

1.14

5.84

-----

3.43

2.92

1.39

6.86

1.27

-----

h_FE-2

DC Current Gain

(I =1.0Adc, V_CE=10Vdc)

Current Gain-Bandwidth Product

(Ic=0.1Adc;V_CE=10Vdc)

MHz

.045

1.15

www.mccsemi.com

Revision: A

2011/01/01

1 of 2

中文翻译

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与TIP47相关器件

型号	品牌	获取价格	描述	数据表
TIP47_08	FAIRCHILD	获取价格	NPN Silicon Transistor
TIP4716	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP4716A	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP-4735SEE	VISHAY	获取价格	14” Infrared Touch Panel
TIP-4735SEE-1	VISHAY	获取价格	14” Infrared Touch Panel
TIP-4735SEE-1_10	VISHAY	获取价格	14" Infrared Touch Panel
TIP47-6200	RENESAS	获取价格	1A, 250V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP47-6226	RENESAS	获取价格	Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP47-6255	RENESAS	获取价格	1A, 250V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP47-6258	RENESAS	获取价格	1A, 250V, NPN, Si, POWER TRANSISTOR, TO-220AB

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