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TIP47AU

更新时间： 2024-09-25 19:39:47
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 114K
描述
TRANSISTOR 1 A, 250 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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中文翻译

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TIP47AU 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.78外壳连接：COLLECTOR
最大集电极电流 (IC)：1 A集电极-发射极最大电压：250 V
配置：SINGLE最小直流电流增益 (hFE)：10
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：10 MHzBase Number Matches：1

TIP47AU 数据手册

 浏览型号TIP47AU的Datasheet PDF文件第2页浏览型号TIP47AU的Datasheet PDF文件第3页浏览型号TIP47AU的Datasheet PDF文件第4页浏览型号TIP47AU的Datasheet PDF文件第5页浏览型号TIP47AU的Datasheet PDF文件第6页 
TIP47G, TIP48G, TIP50G  
High Voltage NPN Silicon  
Power Transistors  
This series is designed for line operated audio output amplifier,  
SWITCHMODE power supply drivers and other switching  
applications.  
http://onsemi.com  
Features  
• Popular TO−220 Plastic Package  
• These Devices are Pb−Free and are RoHS Compliant*  
• Complementary to the MJE5730 and MJE5731 Series  
1.0 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250−300−400 VOLTS  
40 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol TIP47 TIP48 TIP50 Unit  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
Base Current  
V
250  
350  
300  
400  
5.0  
1.0  
2.0  
0.6  
400  
500  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
CEO  
COLLECTOR  
2,4  
V
CB  
V
EB  
I
C
1
I
BASE  
CM  
I
B
3
Total Power Dissipation  
P
P
EMITTER  
D
@ T = 25_C  
40  
0.32  
C
W
W/_C  
Derate above 25_C  
MARKING  
DIAGRAM  
Total Power Dissipation  
D
@ T = 25_C  
2.0  
0.016  
C
W
Derate above 25_C  
W/_C  
mJ  
Unclamped Inducting Load  
Energy (See Figure 8)  
E
20  
4
Operating and Storage  
T , T  
−65 to +150  
_C  
J
stg  
TIPxxG  
AYWW  
Junction Temperature Range  
TO−220AB  
CASE 221A  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
2
3
TIPxx  
xx  
A
Y
WW  
G
= Device Code  
= 47, 48, or 50  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Case  
R
3.125  
°C/W  
q
JC  
Thermal Resistance,  
Junction−to−Ambient  
R
62.5  
°C/W  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 10  
TIP47/D  
123456

中文翻译

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TIP47-DR6260 RENESAS

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