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TIP41ADW PDF预览

TIP41ADW

更新时间: 2024-12-01 05:55:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 408K
描述
TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

TIP41ADW 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general purpose amplifier and switching applications.  
Collector–Emitter Saturation Voltage —  
= 1.5 Vdc (Max) @ I = 6.0 Adc  
Collector–Emitter Sustaining Voltage —  
V
CE(sat)  
C
V
V
V
= 60 Vdc (Min) — TIP41A, TIP42A  
= 80 Vdc (Min) — TIP41B, TIP42B  
= 100 Vdc (Min) — TIP41C, TIP42C  
CEO(sus)  
CEO(sus)  
CEO(sus)  
High Current Gain — Bandwidth Product  
= 3.0 MHz (Min) @ I = 500 mAdc  
Compact TO–220 AB Package  
f
T
C
*Motorola Preferred Device  
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
*MAXIMUM RATINGS  
TIP41A TIP41B TIP41C  
TIP42A TIP42B TIP42C  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
6080100 VOLTS  
65 WATTS  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
Peak  
I
C
6
10  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation  
P
D
@ T = 25 C  
65  
0.52  
Watts  
W/ C  
C
Derate above 25 C  
Total Power Dissipation  
P
D
@ T = 25 C  
2.0  
0.016  
Watts  
W/ C  
A
Derate above 25 C  
CASE 221A–06  
TO–220AB  
Unclamped Inductive Load Energy (1)  
E
62.5  
mJ  
C
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
62.5  
1.92  
θJA  
θJC  
(1) I = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V  
= 10 V, R  
= 100 .  
BE  
C
CC  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–883  
Motorola Bipolar Power Transistor Device Data  

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