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TIP41B PDF预览

TIP41B

更新时间: 2024-11-04 08:48:39
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
3页 132K
描述
NPN Silicon Power Transistor

TIP41B 数据手册

 浏览型号TIP41B的Datasheet PDF文件第2页浏览型号TIP41B的Datasheet PDF文件第3页 
TIP41 Series  
NPN Silicon Power Transistor  
P b  
Lead(Pb)-Free  
COLLECTOR  
2
1
BASE  
1
2
3
FEATURES:  
* Medium Power Linear Switching Applications  
1. BASE  
2. COLLECTOR  
3. EMITTER  
3
TO-220  
EMITTER  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
TIP41A  
Units  
TIP41  
TIP41B TIP41C  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
60  
60  
V
V
40  
80  
80  
100  
100  
VCEO  
VEBO  
IC  
40  
5
V
A
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
6
2
PC  
W
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
MAX  
UNIT  
TIP41  
TIP41A  
TIP41B  
TIP41C  
TIP41  
40  
60  
80  
V
Collector-base breakdown voltage  
IC=1mA, I  
E=0  
V(BR)CBO  
100  
40  
60  
80  
TIP41A  
TIP41B  
TIP41C  
V(BR)CEO  
V(BR)EBO  
ICBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
IC=30mA, I  
B=0  
V
V
100  
5
IE= 1mA, I  
VCB=40V, I  
C=0  
TIP41  
TIP41A  
TIP41B  
TIP41C  
E=0  
E=0  
E=0  
V
CB=60V, I  
Collector cut-off current  
mA  
0.4  
VCB=80V, I  
VCB=100V, IE =0  
TIP41/41A  
VCE=30V, IB=0  
ICEO  
Collector cut-off current  
Emitter cut-off current  
mA  
mA  
0.7  
1
=0  
TIP41B/41C  
VCE=60V, IB  
IEBO  
VEB=5V, IC=0  
hFE(1)  
VCE=4V, I  
C=0.3A  
30  
15  
DC current gain  
hFE(2)  
VCE=4V, I  
C=3A  
75  
1.5  
VCE (sat) IC=6A, IB =0.6A  
VCE=4V, I  
Collector-emitter saturation voltage  
Base-emitter voltage  
V
V
C=6A  
VBE(on)  
2
VCE=10V, IC=0.5A  
f = 1MHz  
MHz  
Transition Frequency  
f T  
3
WEITRON  
http://www.weitron.com.tw  
1/3  
12-Aug-10  

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