Datasheet > TIP33B

TIP33B

更新时间： 2024-11-29 05:52:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	121K
描述
Silicon NPN Power Transistors

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中文翻译

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TIP33B 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

TIP33/33A/33B/33C

DESCRIPTION

·With TO-3PN package

·Complement to type TIP34/34A/34B/34C

·DC current gain h_FE=40(Min)@I_C=1.0A

APPLICATIONS

·Designed for use in general purpose

power amplifier and switching applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP33

TIP33A

TIP33B

TIP33C

TIP33

V_CBO

Collector-base voltage

Open emitter

100

TIP33A

TIP33B

TIP33C

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

MAX

UNIT

R_{th j-c}

1.56

℃/W

12 3

中文翻译

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