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TIP33LEADFREE PDF预览

TIP33LEADFREE

更新时间: 2024-11-15 19:51:43
品牌 Logo 应用领域
CENTRAL 局域网开关晶体管
页数 文件大小 规格书
2页 439K
描述
Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

TIP33LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.65
最大集电极电流 (IC):10 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
Base Number Matches:1

TIP33LEADFREE 数据手册

 浏览型号TIP33LEADFREE的Datasheet PDF文件第2页 
TIP33 TIP33A TIP33B TIP33C NPN  
TIP34 TIP34A TIP34B TIP34C PNP  
www.centralsemi.com  
COMPLEMENTARY  
SILICON POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR TIP33 and TIP34  
series devices are complementary silicon high power  
transistors manufactured by the epitaxial base process,  
designed for general purpose amplifier and switching  
applications.  
MARKING: FULL PART NUMBER  
TO-218 TRANSISTOR CASE  
TIP33 TIP33A TIP33B TIP33C  
SYMBOL TIP34 TIP34A TIP34B TIP34C UNITS  
MAXIMUM RATINGS: (T =25°C)  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
40  
60  
80  
100  
V
CBO  
CEO  
EBO  
40  
60  
80  
100  
V
5.0  
10  
V
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
I
A
C
I
15  
A
CM  
I
3.0  
3.5  
80  
A
B
Power Dissipation (T =25°C)  
P
W
A
D
D
Power Dissipation  
P
W
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
35.7  
°C  
°C/W  
°C/W  
J
stg  
Θ
JA  
JC  
Thermal Resistance  
Θ
1.56  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=30V (TIP33, TIP33A, TIP34, TIP34A)  
0.7  
0.7  
0.4  
1.0  
mA  
CEO  
CEO  
CES  
EBO  
CE  
CE  
CE  
EB  
=60V (TIP33B, TIP33C, TIP34B, TIP34C)  
mA  
mA  
mA  
V
=Rated V  
=5.0V  
CEO  
BV  
BV  
BV  
BV  
I =30mA (TIP33, TIP34)  
40  
60  
CEO  
CEO  
C
I =30mA (TIP33A, TIP34A)  
V
C
I =30mA (TIP33B, TIP34B)  
80  
V
CEO  
C
I =30mA (TIP33C, TIP34C)  
100  
V
CEO  
C
V
V
V
V
I =3.0A, I =0.3A  
1.0  
4.0  
1.6  
3.0  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
FE  
C
B
I =10A, I =2.5A  
V
C
B
V
=4.0V, I =3.0A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
=4.0V, I =10A  
V
C
h
h
h
=4.0V, I =1.0A  
40  
20  
20  
3.0  
C
=4.0V, I =3.0A  
100  
FE  
C
=10V, I =0.5A, f=1.0kHz  
fe  
C
f
=10V, I =0.5A, f=1.0MHz  
MHz  
T
C
R1 (18-July 2013)  

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