Datasheet > TIP33C

TIP33C

更新时间： 2024-09-27 03:59:43

品牌	Logo	应用领域
KEC		晶体放大器晶体管功率放大器局域网高功率电源
页数	文件大小	规格书
2页	76K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)

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中文翻译

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数据手册

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TIP33C 数据手册

SEMICONDUCTOR

TIP33C

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

ᴌComplementary to TIP34C.

ᴌRecommended for 45Wᴕ50W Audio Frequency

Amplifier Output Stage.

DIM MILLIMETERS

15.9 MAX

4.8 MAX

20.0+0.3

2.0+0.3

1.0+0.3/-0.25

2.0

1.0

3.3 MAX

9.0

4.5

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

2.0

1.8 MAX

100

20.5 0.5

2.8

5.45+0.2

Φ3.2 0.2

0.6+0.3/-0.1

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

I_B

Base Current

Collector Power Dissipation

(Tc=25ᴱ)

P_C

TO-3P(N)

T_j

Junction Temperature

150

ᴱ

T_stg

Storage Temperature Range

-55ᴕ150

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=100V, I_E=0

V_EB=6V, I_C=0

Collector Cut-off Current

I_EBO

ỌA

Emitter Cut-off Current

V_(BR)CEO

h_FE(Note)

V_CE(sat)

f_T

I_C=25mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

100

V_CE=4V, I_C=2A

I_C=4A, I_B=0.4A

160

1.0

Collector-Emitter Saturation Voltage

Transition Frequency

MHz

V_CE=12V, I_C=0.5A

V_CB=10V, I_E=0, f=1MHz

150

C_ob

Collector Output Capacitance

Note : h_FEClassification R:55~110, O:80~160

2001. 1. 10

Revision No : 1

1/2

中文翻译

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