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TIP33CG PDF预览

TIP33CG

更新时间: 2024-11-29 12:33:47
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安森美 - ONSEMI 晶体开关放大器晶体管功率双极晶体管功率放大器局域网
页数 文件大小 规格书
6页 109K
描述
NPN High-Power Transistors Designed for general−purpose power amplifier and switching

TIP33CG 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-218包装说明:LEAD FREE, PLASTIC, CASE 340D-02, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.87Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

TIP33CG 数据手册

 浏览型号TIP33CG的Datasheet PDF文件第2页浏览型号TIP33CG的Datasheet PDF文件第3页浏览型号TIP33CG的Datasheet PDF文件第4页浏览型号TIP33CG的Datasheet PDF文件第5页浏览型号TIP33CG的Datasheet PDF文件第6页 
TIP33A, TIP33C  
NPN High-Power Transistors  
Designed for generalpurpose power amplifier and switching  
applications.  
Features  
ESD Ratings: Machine Model, C; > 400 V  
Human Body Model, 3B; > 8000 V  
Epoxy Meets UL 94 V0 @ 0.125 in  
These are PbFree Devices*  
http://onsemi.com  
10 AMPERE  
NPN SILICON  
POWER TRANSISTORS  
60 & 100 VOLT, 80 WATTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector Emitter Voltage  
TIP33A  
TIP33C  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
100  
Collector Base Voltage  
TIP33A  
TIP33C  
60  
100  
Vdc  
Vdc  
SOT93 (TO218)  
CASE 340D  
STYLE 1  
Emitter Base Voltage  
5.0  
Collector Current Continuous  
I
C
10  
15  
Adc  
Apk  
Peak (Note 1)  
Base Current Continuous  
I
B
3.0  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
80  
0.64  
Watts  
W/°C  
C
Derate above 25°C  
TO247  
CASE 340L  
STYLE 3  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
1.56  
35.7  
Unit  
°C/W  
°C/W  
NOTE: Effective June 2012 this device will  
be available only in the TO247  
Thermal Resistance, JunctiontoCase  
Thermal Resistance, JunctiontoAmbient  
R
q
JC  
R
q
JA  
package. Reference FPCN# 16827.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 Rev. 4  
TIP33C/D  
 

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