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TIP117

更新时间: 2024-11-23 08:48:47
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管功率双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
2页 367K
描述
PNP Epitaxial Silicon Darlington Transistors

TIP117 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.15
Is Samacsys:N最大集电极电流 (IC):2 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):500JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

TIP117 数据手册

 浏览型号TIP117的Datasheet PDF文件第2页 
M C C  
TIP115  
TIP116  
TIP117  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
·
High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.)  
Low Collector-Emitter Saturation Voltage  
Complementary to TIP110/111/112  
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
PNP Epitaxial  
Silicon Darlington  
Transistors  
·
·MaMxiomisuurme SReantsiitnivgitsy Level 1  
Symbol  
Rating  
Rating  
Unit  
TO-220  
VCEO  
Collector-Emitter Voltage  
TIP115  
TIP116  
TIP117  
60  
80  
100  
C
B
V
S
F
VCBO  
Collector-Base Voltage  
Q
TIP115  
TIP116  
TIP117  
60  
80  
100  
T
V
A
VEBO  
IC  
ICP  
IB  
Emitter-Base Voltage  
Collector Current (DC)  
5.0  
2.0  
4.0  
50  
2.0  
V
A
A
mA  
W
W
OC  
OC  
U
Collector Current (Pulse)  
Base Current (DC)  
Collector Dissipation @TA=25OC  
Collector Dissipation @TC=25OC  
Junction Temperature  
H
PC  
K
50  
TJ,  
TSTG  
-55 to +150  
-55 to +150  
Storage Temperature  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
V
L
J
Symbl  
Parameter  
Min  
Max  
Units  
D
R
G
OFF CHARACTERISTICS  
Equivalent Circuit  
N
VCEO(SUS)  
Collector-Emitter Sustaining Voltage  
C
(I C=30mAdc, IB=0)  
TIP115  
TIP116  
TIP117  
60  
80  
100  
---  
---  
---  
Vdc  
B
ICEO  
Collector Cut-off Current  
(V CE=30Vdc, IB=0)  
(VCE=40Vdc, IB=0)  
(VCE=50Vdc, IB=0)  
TIP115  
TIP116  
TIP117  
---  
---  
---  
2.0  
2.0  
2.0  
mAdc  
ICBO  
Collector Cut-off Current  
(V CB=60Vdc, IE=0)  
R1  
R2  
1.Base  
2.Collector  
3.Emitter  
TIP115  
TIP116  
TIP117  
---  
---  
---  
1.0  
1.0  
1.0  
mAdc  
mAdc  
E
R1 10 k  
R2 0.6 k Ω  
(V CB=80Vdc, I =0)  
E
(V CB=100Vdc, IE=0)  
Emitter Cut-off Current  
(VBE=5.0Vdc, IC=0)  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
IEBO  
---  
2.0  
ꢇ ꢇ ꢇ ꢇ  
INCHES  
MM  
ꢀꢁꢂ  
A
B
C
D
F
G
H
J
K
L
Q
ꢂꢁꢄ  
.595  
.380  
.160  
.025  
.142  
.190  
.110  
.018  
.500  
.045  
.100  
.080  
.045  
.235  
------  
ꢂꢈꢉ  
.620  
.405  
.190  
.035  
.147  
.210  
.130  
.025  
.562  
.060  
.120  
.110  
.055  
.255  
.050  
ꢂꢁꢄ  
ꢂꢈꢉ  
15.75  
10.29  
4.82  
0.89  
3.73  
5.33  
3.30  
0.64  
14.27  
1.52  
3.04  
2.79  
1.39  
6.48  
1.27  
ꢄꢆꢊꢃ  
ON CHARACTERISTICS  
hFE(1)  
15.11  
9.65  
4.06  
0.64  
3.61  
4.83  
2.79  
0.46  
12.70  
1.14  
2.54  
2.04  
1.14  
5.97  
-----  
DC Current Gain  
(I C=1.0Adc, VCE=4.0Vdc)  
1000  
500  
---  
---  
---  
2.5  
----  
Vdc  
Vdc  
pF  
(I =2.0Adc, VCE=4.0Vdc)  
C
VCE(sat)  
VBE(ON)  
Cob  
Collector-Emitter Saturation Voltage  
(I =2.0Adc, IB=8.0mAdc)  
C
Base-Emitter On Voltage  
(I C=2.0Adc,VCE=4.0Adc)  
Output Capacitance  
---  
---  
2.8  
200  
R
S
T
(V CB=10V, IE=0, f=0.1MH z)  
U
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 1  
Revision: A  
2011/01/01  

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