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TIL191B

更新时间： 2024-11-15 22:19:43
品牌 Logo 应用领域
德州仪器 - TI 晶体光电二极管晶体管输出元件
页数 文件大小 规格书
6页 87K
描述
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel

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TIL191B 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：PLASTIC, DIP-4
Reach Compliance Code：not_compliantHTS代码：8541.40.80.00
风险等级：5.37其他特性：UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：35 V配置：SINGLE
标称电流传输比：100%最大暗电源：100 nA
最大正向电流：0.05 A最大绝缘电压：2500 V
元件数量：1光电设备类型：TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches：1

TIL191B 数据手册

 浏览型号TIL191B的Datasheet PDF文件第2页浏览型号TIL191B的Datasheet PDF文件第3页浏览型号TIL191B的Datasheet PDF文件第4页浏览型号TIL191B的Datasheet PDF文件第5页浏览型号TIL191B的Datasheet PDF文件第6页 
TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A  
TIL191B, TIL192B, TIL193B  
OPTOCOUPLERS  
SOES026B – APRIL 1989 – REVISED APRIL 1998  
Gallium-Arsenide-Diode Infrared Source  
High-Voltage Electrical Isolation 3.535 kV  
Peak (2.5 kV rms)  
Source Is Optically Coupled to Silicon npn  
Phototransistor  
Plastic Dual-In-Line Packages  
UL Listed — File #E65085  
Choice of One, Two, or Four Channels  
Choice of Three Current-Transfer Ratios  
description  
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per  
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,  
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are  
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and  
100% minimum are designated with the suffix A and B respectively.  
schematic diagrams  
TIL193  
TIL191  
1
16  
1ANODE  
1
1COLLECTOR  
4
3
ANODE  
COLLECTOR  
EMITTER  
15  
14  
1EMITTER  
2
3
1CATHODE  
2ANODE  
2
CATHODE  
2COLLECTOR  
13  
12  
4
5
TIL192  
2EMITTER  
2CATHODE  
3ANODE  
1
8
1ANODE  
1COLLECTOR  
3COLLECTOR  
7
6
11  
10  
1EMITTER  
2
3
3EMITTER  
6
7
1CATHODE  
2ANODE  
3CATHODE  
4ANODE  
2COLLECTOR  
3COLLECTOR  
5
4
9
8
2EMITTER  
2CATHODE  
3EMITTER  
4CATHODE  
†
absolute maximum ratings at 25°C free-air (unless otherwise noted)  
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)  
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V  
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V  
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V  
Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA  
Continuous total power dissipation at (or below) 25°C free-air temperature:  
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW  
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW  
Storage temperature range, T  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C  
stg  
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
NOTES: 1. Thisratingappliesforsine-waveoperationat50Hzor60Hz.ThiscapabilityisverifiedbytestinginaccordancewithULrequirements.  
2. This value applies when the base-emitter diode is open circuited.  
3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.  
4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.  
5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
123456

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与TIL191B相关器件

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TIL191B-G ISOCOM

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 		Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
TIL191BSM ISOCOM

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 		Transistor Output Optocoupler, 1-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-4
TIL191B-SM ISOCOM

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 		Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT PA
TIL191BSMTR ISOCOM

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 		暂无描述
TIL191BX ISOCOM

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 		Transistor Output Optocoupler,
TIL191BXG ISOCOM

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 		Transistor Output Optocoupler,
TIL191BXSM ISOCOM

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 		Transistor Output Optocoupler,
TIL191BXSMT&R ISOCOM

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 		Transistor Output Optocoupler,
TIL191G ISOCOM

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 		Transistor Output Optocoupler, 1-Element, 5300V Isolation
TIL191-G ISOCOM

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 		Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER

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