TIL192A

更新时间： 2024-09-27 22:19:43

品牌	Logo	应用领域
德州仪器 - TI		晶体光电二极管晶体管输出元件
页数	文件大小	规格书
6页	87K
描述
Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per channel

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TIL192A 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	PLASTIC, DIP-8
Reach Compliance Code：	not_compliant	HTS代码：	8541.40.80.00
风险等级：	5.5	其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	35 V	配置：	SEPARATE, 2 CHANNELS
标称电流传输比：	50%	最大暗电源：	100 nA
最大正向电流：	0.05 A	最大绝缘电压：	2500 V
元件数量：	2	光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches：	1

TIL192A 数据手册

TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A

TIL191B, TIL192B, TIL193B

OPTOCOUPLERS

SOES026B – APRIL 1989 – REVISED APRIL 1998

Gallium-Arsenide-Diode Infrared Source

High-Voltage Electrical Isolation 3.535 kV

Peak (2.5 kV rms)

Source Is Optically Coupled to Silicon npn

Phototransistor

Plastic Dual-In-Line Packages

UL Listed — File #E65085

Choice of One, Two, or Four Channels

Choice of Three Current-Transfer Ratios

description

These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per

channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,

and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are

tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and

100% minimum are designated with the suffix A and B respectively.

schematic diagrams

TIL193

TIL191

1ANODE

1COLLECTOR

ANODE

COLLECTOR

EMITTER

1EMITTER

1CATHODE

2ANODE

CATHODE

2COLLECTOR

TIL192

2EMITTER

2CATHODE

3ANODE

1ANODE

1COLLECTOR

3COLLECTOR

1EMITTER

3EMITTER

1CATHODE

2ANODE

3CATHODE

4ANODE

2COLLECTOR

3COLLECTOR

2EMITTER

2CATHODE

3EMITTER

4CATHODE

†

absolute maximum ratings at 25°C free-air (unless otherwise noted)

Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±3.535 kV peak or dc (±2.5 kV rms)

Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V

Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V

Input diode continuous forward current at (or below) 25°C free-air temperature (see Note 3) . . . . . . . 50 mA

Continuous total power dissipation at (or below) 25°C free-air temperature:

Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW

Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW

Storage temperature range, T

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to 125°C

stg

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Thisratingappliesforsine-waveoperationat50Hzor60Hz.ThiscapabilityisverifiedbytestinginaccordancewithULrequirements.

2. This value applies when the base-emitter diode is open circuited.

3. Derate linearly to 100°C free-air temperature at the rate of 0.67 mA/°C.

4. Derate linearly to 100°C free-air temperature at the rate of 2 mW/°C.

5. Derate linearly to 100°C free-air temperature at the rate of 2.67 mW/°C.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6

中文翻译

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TIL192A 替代型号

型号	品牌	替代类型	描述	数据表
SFH6286-3T	VISHAY	功能相似	Optocoupler, Phototransistor Output, AC Input, Low Input Current
ILQ74	VISHAY	功能相似	Optocoupler, Phototransistor Output(Single, Dual, Quad Channel)
4N33	VISHAY	功能相似	Optocoupler with Photodarlington Output

与TIL192A相关器件

型号	品牌	获取价格	描述	数据表
TIL192AG	ISOCOM	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation
TIL192A-G	ISOCOM	获取价格	Optocoupler - Transistor Output, 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
TIL192ASM	ISOCOM	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation, SURFACE MOUNT PACKAGE-8
TIL192ASMTR	ISOCOM	获取价格	Transistor Output Optocoupler
TIL192AX	ISOCOM	获取价格	Transistor Output Optocoupler,
TIL192AXSM	ISOCOM	获取价格	Transistor Output Optocoupler,
TIL192AXSMT&R	ISOCOM	获取价格	Transistor Output Optocoupler,
TIL192B	ISOCOM	获取价格	HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
TIL192B	TI	获取价格	Optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phot
TIL192BG	ISOCOM	获取价格	Transistor Output Optocoupler, 2-Element, 5300V Isolation

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