生命周期: | Active | 包装说明: | DIMM, DIMM168 |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
最长访问时间: | 9 ns | 最大时钟频率 (fCLK): | 83.3 MHz |
I/O 类型: | COMMON | JESD-30 代码: | R-PDMA-N168 |
内存密度: | 134217728 bit | 内存集成电路类型: | SYNCHRONOUS DRAM MODULE |
内存宽度: | 64 | 端子数量: | 168 |
字数: | 2097152 words | 字数代码: | 2000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 2MX64 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIMM |
封装等效代码: | DIMM168 | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
最大待机电流: | 0.016 A | 子类别: | DRAMs |
最大压摆率: | 1 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
THMY642051AEG12A | TOSHIBA |
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THMY642051AEG12A | |
THMY644071AEG10 | TOSHIBA |
获取价格 |
THMY644071AEG10 | |
THMY644071BEG | TOSHIBA |
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4,194,304-WORD BY 64-BIT SNCHRONOUS DRAM MODULE | |
THMY648071BEG | TOSHIBA |
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8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE | |
THMY648071BEG-10 | TOSHIBA |
获取价格 |
8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE | |
THMY648071BEG-80 | TOSHIBA |
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8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE | |
THMY6480D1EG-80H | TOSHIBA |
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IC 8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | |
THMY6480H1EG-75 | TOSHIBA |
获取价格 |
IC 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM | |
THMY64E11A80 | TOSHIBA |
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IC 8M X 16 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | |
THMY64E11A80L | TOSHIBA |
获取价格 |
IC 8M X 16 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM |