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TGL41-6.8HE3 PDF预览

TGL41-6.8HE3

更新时间: 2024-12-01 19:36:11
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
6页 92K
描述
Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

TGL41-6.8HE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-213AB包装说明:O-PELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74最大击穿电压:7.48 V
最小击穿电压:6.12 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-213AB
JESD-30 代码:O-PELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):250
极性:UNIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40Base Number Matches:1

TGL41-6.8HE3 数据手册

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TGL41-6.8 thru TGL41-200A  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Plastic MELF package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 % (200 W above 91 V)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-213AB (GL41)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 250 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of  
sensor units for consumer, computer, industrial and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
PD  
6.8 V to 200 V  
400 W, 200 W  
1.0 W  
MECHANICAL DATA  
Case: DO-213AB (GL41)  
Molding compound meets UL 94 V-0 flammability  
rating  
IFSM  
40 A  
TJ max.  
150 °C  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Blue band denotes the cathode which is  
positive with respect to the anode under normal TVS  
operation  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBO  
PPPM  
PD  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
400  
W
Power dissipation on infinite heatsink at TL = 75 °C  
1.0  
See next table  
40  
W
A
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only  
Operating junction and storage temperature range  
IPPM  
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 200 W above 91 V  
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum  
Document Number: 88403  
Revision: 20-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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