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TGL41-56A-E3/26 PDF预览

TGL41-56A-E3/26

更新时间: 2024-11-07 05:41:35
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管瞬态抑制器
页数 文件大小 规格书
6页 88K
描述
Trans Voltage Suppressor Diode, 400W, 47.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-213AB, ROHS COMPLIANT, PLASTIC, GL41, MELF-2

TGL41-56A-E3/26 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-213AB包装说明:O-PELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.63其他特性:EXCELLENT CLAMPING CAPABILITY
最大击穿电压:58.8 V最小击穿电压:53.2 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-213ABJESD-30 代码:O-PELF-R2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):250极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:47.8 V表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:40Base Number Matches:1

TGL41-56A-E3/26 数据手册

 浏览型号TGL41-56A-E3/26的Datasheet PDF文件第2页浏览型号TGL41-56A-E3/26的Datasheet PDF文件第3页浏览型号TGL41-56A-E3/26的Datasheet PDF文件第4页浏览型号TGL41-56A-E3/26的Datasheet PDF文件第5页浏览型号TGL41-56A-E3/26的Datasheet PDF文件第6页 
TGL41-6.8 thru TGL41-200A  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Plastic MELF package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in Unidirectional polarity only  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 % (200 W above 91 V)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-213AB (GL41)  
• Typical I less than 1 µA above 10 V rating  
D
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 250 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
MAJOR RATINGS AND CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of  
sensor units for consumer, computer, industrial and  
telecommunication.  
VBR  
PPPM  
PD  
6.8 V to 200 V  
400 W, 200 W  
1.0 W  
IFSM  
40 A  
MECHANICAL DATA  
Tj max.  
150 °C  
Case: DO-213AB (GL41)  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Blue band denotes the cathode which is  
positive with respect to the anode under normal TVS  
operation.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBO  
PPPM  
PD  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Minimum 400  
W
1.0  
see next table  
40  
W
A
IPPM  
(2)  
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only  
Maximum instantaneous forward voltage at 25 A for unidirectional only  
Operating junction and storage temperature range  
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 150  
°C  
Note:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 200 W above 91 V  
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum  
Document Number 88403  
05-Sep-06  
www.vishay.com  
1

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