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TGL41-43HE3 PDF预览

TGL41-43HE3

更新时间: 2024-11-02 03:56:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 92K
描述
Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-213AB, PLASTIC, GL41, 2 PIN

TGL41-43HE3 数据手册

 浏览型号TGL41-43HE3的Datasheet PDF文件第2页浏览型号TGL41-43HE3的Datasheet PDF文件第3页浏览型号TGL41-43HE3的Datasheet PDF文件第4页浏览型号TGL41-43HE3的Datasheet PDF文件第5页浏览型号TGL41-43HE3的Datasheet PDF文件第6页 
TGL41-6.8 thru TGL41-200A  
Vishay General Semiconductor  
Surface Mount TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Plastic MELF package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 % (200 W above 91 V)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
DO-213AB (GL41)  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 250 °C  
• Solder dip 260 °C, 40 s  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of  
sensor units for consumer, computer, industrial and  
telecommunication.  
PRIMARY CHARACTERISTICS  
VBR  
PPPM  
PD  
6.8 V to 200 V  
400 W, 200 W  
1.0 W  
MECHANICAL DATA  
Case: DO-213AB (GL41)  
Molding compound meets UL 94 V-0 flammability  
rating  
IFSM  
40 A  
TJ max.  
150 °C  
Base P/N-E3 - RoHS compliant, commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Blue band denotes the cathode which is  
positive with respect to the anode under normal TVS  
operation  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBO  
PPPM  
PD  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
400  
W
Power dissipation on infinite heatsink at TL = 75 °C  
1.0  
See next table  
40  
W
A
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only  
Operating junction and storage temperature range  
IPPM  
IFSM  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 150  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 200 W above 91 V  
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum  
Document Number: 88403  
Revision: 20-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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