Datasheet > TGL41-27CAE3

TGL41-27CAE3

更新时间： 2024-11-06 14:31:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	187K
描述
Trans Voltage Suppressor Diode, 500W, 23.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-213AB,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TGL41-27CAE3 技术参数

生命周期：	Obsolete	包装说明：	O-PELF-R2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.72
最大击穿电压：	28.4 V	最小击穿电压：	25.7 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-213AB	JESD-30 代码：	O-PELF-R2
最大非重复峰值反向功率耗散：	500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
极性：	BIDIRECTIONAL	最大功率耗散：	3 W
最大重复峰值反向电压：	23.1 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	WRAP AROUND
端子位置：	END	Base Number Matches：	1

TGL41-27CAE3 数据手册

TGL41-6.8 thru TGL41-200CA

500 Watt Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

APPEARANCE

DESCRIPTION

This series of 500 W Transient Voltage Suppressors (TVSs) provides the

highest level of Peak Pulse Power (P_PP) in the industry for the DO-213AB

size MELF package. These P_PPlevels offer protection from switching

transients, induced RF, secondary lightning, as well as ESD or EFT where

these devices are also compliant to IEC61000-4-2 and IEC61000-4-4. In

addition to unidirectional TVS configurations, this series also offers

bidirectional options with C or CA suffix. Its configuration in a MELF

package prevents lead damage to terminals and also reduces inductive

parasitics for minimal transient voltage overshoots.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS / BENEFITS

FEATURES

Economical series for 500 Watt Surface Mount

transient voltage suppressor.

For Surface Mount Applications

Protection from switching transients, induced

RF, secondary lightning, as well as ESD, and

EFT per IEC 61000-4-2 and IEC 6100-4-4

Available in Both Unidirectional and Bidirectional

Construction. Bidirectional has a C or CA suffix.

6.8 to 200 Volts Available.

Very low inductive parasitics with minimal

Ldi/dt voltage overshoots for fast-rise-time

transients

500 Watts Peak Power Dissipation.

Fast Response Time: Subnanosecond Response

(Unipolar) or 5.0 ns (Bipolar).

Robust package for pick-and-place handling

Plastic package has flame retardant epoxy meeting

UL94V-0

MAXIMUM RATINGS @ 25^oC*

MECHANICAL AND PACKAGING

Peak Pulse Power Dissipation (P_PP) - 500 W (Note

1 & 5).

Molded epoxy package meets UL94V-0

End-Cap terminals solderable per MIL-STD-750,

Method 2026 (max 260^oC for 10 seconds.

Peak Forward Surge Current (I_FSM) - 40 A (Note 3)

Polarity is indicated by cathode band. Bidirectional

devices have no polarity band.

Peak Pulse Current (I_PP) at 10/1000 ms waveform -

see Table 1 (Note 1)

Body marked with P/N without TGL41 prefix.

Weight: 0.06 grams (approximate)

Steady-State Power Dissipation, P_(AV)- 3.0W (Note

2, 4)

Operating and Storage temperatures, T_OP, T_STG

(-55^oC to +150^oC)

–

Tape and Reel packaging per EIA-481-2 with 12

mm tape with 5000 per 13 inch reel.

Thermal Resistance junction to end cap (R _JEC) –

15^oC/W

* Unless otherwise specified.

NOTES:

1. Non-repetitive current pulse, per Figure 3 and derated above TA = 25^oC per Figure 2.

2. Mounted on 4.0 mm copper pads to each terminal. (See Figure 3)

3. 8.3 ms single half-sine wave duty cycle = 4 pulses per minute max. Peak forward voltage at 40 A is 3.5 volts (unipolar only)

4. Derate linearly above 100^oC to zero at 150^oC for dc steady-state power. Also see Figure 2 for transient derating.

5. Peak pulse current waveform is 10/1000 ms, with maximum duty cycle of 0.01%. (See Figure 4)

01-29-2003 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与TGL41-27CAE3相关器件

型号	品牌	获取价格	描述	数据表
TGL41-27CAR7	DIOTEC	获取价格	Transient Suppressor,
TGL41-27CATGL41	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 23.1V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TGL41-27CTGL41	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-
TGL41-27E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-27-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-27-E3/76	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-27-E3/96	VISHAY	获取价格	Trans Voltage Suppressor Diode, 21.8V V(RWM), Unidirectional,
TGL41-27TGL41	SEMIKRON	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
TGL41-30	VISHAY	获取价格	SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SU
TGL41-30	DIOTEC	获取价格	Surface Mount unidirectional and bidirectional Transient Voltage Suppressor Diodes

与TGL41-27CAE3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-27CAE3

TGL41-27CAE3 技术参数

TGL41-27CAE3 数据手册

与TGL41-27CAE3相关器件

与TGL41-27CAE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TGL41-27CAE3

TGL41-27CAE3 技术参数

TGL41-27CAE3 数据手册

与TGL41-27CAE3相关器件

与TGL41-27CAE3相关文章

您还可以找

您在本页遇到什么问题？