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TD122N22KOFHOSA1

更新时间: 2024-11-02 05:59:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 412K
描述
Silicon Controlled Rectifier

TD122N22KOFHOSA1 数据手册

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Datenblatt / Data sheet  
N
Netz-Thyristor-Modul  
TT122N  
Phase Control Thyristor Module  
TT122N  
TT122N...K..-A  
TD122N  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max  
repetitive peak forward off-state and reverse voltages  
1800  
2200  
2000 V  
2400 V  
VDRM,VRRM  
(1)  
1800  
2200  
2000 V  
2400 V  
Vorwärts-Stoßspitzensperrspannung  
non-repetitive peak forward off-state voltage  
Tvj = -40°C... Tvj max  
VDSM  
1900  
2300  
2100 V  
2500 V  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
Tvj = +25°C... Tvj max  
VRSM  
220 A  
Durchlaßstrom-Grenzeffektivwert  
maximum RMS on-state current  
Dauergrenzstrom  
average on-state current  
ITRMSM  
ITAVM  
122 A  
140 A  
TC = 85 °C  
TC = 76°C  
3300 A  
2950 A  
Stoßstrom-Grenzwert  
surge current  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
ITSM  
54450 A²s  
43500 A²s  
Grenzlastintegral  
I²t-value  
Tvj = 25 °C, tP = 10 ms  
Tvj = Tvj max, tP = 10 ms  
I²t  
DIN IEC 747-6 f = 50 Hz,  
GM = 1 A, diG/dt = 1 A/µs  
100 A/µs  
Kritische Stromsteilheit  
(diT/dt)cr  
(dvD/dt)cr  
i
critical rate of rise of on-state current  
Kritische Spannungssteilheit  
critical rate of rise of off-state voltage  
Tvj = Tvj max, vD = 0,67 VDRM  
6.Kennbuchstabe / 6th letter C  
6.Kennbuchstabe / 6th letter F  
500 V/µs  
1000 V/µs  
Charakteristische Werte / Characteristic values  
Durchlaßspannung  
max.  
1,95 V  
1,00 V  
2,15 mΩ  
200 mA  
2 V  
Tvj = Tvj max , iT = 400 A  
Tvj = Tvj max  
vT  
on-state voltage  
Schleusenspannung  
threshold voltage  
Ersatzwiderstand  
slope resistance  
Zündstrom  
gate trigger current  
Zündspannung  
gate trigger voltage  
Nicht zündender Steuerstrom  
gate non-trigger current  
Nicht zündende Steuerspannung  
gate non-trigger voltage  
V(TO)  
rT  
Tvj = Tvj max  
max.  
max.  
Tvj = 25°C, vD = 6 V  
Tvj = 25°C, vD = 6 V  
IGT  
VGT  
IGD  
VGD  
IH  
max.  
max.  
Tvj = Tvj max , vD = 6 V  
Tvj = Tvj max , vD = 0,5 VDRM  
Tvj = Tvj max , vD = 0,5 VDRM  
10 mA  
5 mA  
0,25 V  
max.  
Haltestrom  
holding current  
Tvj = 25°C, vD = 6 V, RA = 5 Ω  
max.  
300 mA  
Einraststrom  
latching current  
Tvj = 25°C, vD = 6 V, RGK 10 Ω  
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs  
IL  
max. 1200 mA  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse current  
Zündverzug  
gate controlled delay time  
Tvj = Tvj max  
iD, iR  
tgd  
max.  
max.  
30 mA  
4 µs  
vD = VDRM, vR = VRRM  
DIN IEC 747-6 Tvj = 25 °C,  
i
GM = 1 A, diG/dt = 1 A/µs  
(1) 2400V auf Anfrage/ 2400V on request  
C.Drilling  
date of publication: 01.07.02  
prepared by:  
Revision:  
1
approved by: J. Novotny  
A70 / 94  
BIP AC / MA2-BE / 22 Nov , A.Rüther  
1/12  
Seite/page  

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