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TCTK751HFBIBS1L-PF PDF预览

TCTK751HFBIBS1L-PF

更新时间: 2024-11-28 00:04:59
品牌 Logo 应用领域
ACT 石英晶振温度补偿晶振
页数 文件大小 规格书
3页 643K
描述
LOW POWER HCMOS 1/60Hz ~ 32.768kHz TCXO

TCTK751HFBIBS1L-PF 数据手册

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Tel  
Fax:  
email:  
0044(0)118 979 1238  
0044(0)118 979 1283  
info@act crystals.com  
ACT TCTK75-6 LOW POWER HCMOS 1/60Hz~32.768kHz TCXO  
Stability:  
Accuracy:  
Operating current: 400nA typical  
±5ppm (-40+85°C)  
±1.5ppm  
Characteristics  
Frequency Range (MHz)  
32.768 kHz, 4.096 kHz, 1.024 kHz  
128 Hz, 32 Hz 1 Hz 1/10 Hz, 1/60 Hz  
1.8, 2.5, 3.0, 3.3, 5.0  
-40 ~ +85°C  
Supply voltage ±5% Vcc (VDC)  
Operating temperature Top (°C  
Operating Current (mA max)  
Stabilty v T op (ppm)  
Fig 1  
±5 (Fig 2)  
Stabilty v Vcc(ppm)  
Stabilty v Load (ppm)  
Stabilty v 1 reflow (ppm)  
Aging @25°C (ppm)  
Tolerance @ 25°C (ppm)  
Load ±10%  
±0.2 (±5% change)  
±0.2 (±10% change)  
±1.0 (24hrs after reflow)  
±3 first year max  
±1.5  
15pF HCMOS  
Output voltage (V) (IOL 0.1mA)  
VOH Vcc-0.4 min, VOL 0.4V max  
Duty Cycle (%)  
Start up time (ms, max)  
Switching Jitter (ns)  
4//60 (kHz range), 45/55 (Hz range )  
1 (25°C), 3(85°C)  
2000 (kHz range), 0 (Hz range)  
Compensation interval (Fig 3)  
Pad 1  
4 min std, 2min, 1min,0.5min options  
Tristate (Enable high)  
Rating  
Storage temperature (°C)  
ESD Sensitivity (KV)*  
MSL  
-40 ~ 85 max  
2 (HBM) IEC 61000-4-2  
Level 1 IPC/JEDEC JSTD-020D.1  
0.3~1.2µm Au over 1.27~8.89µm Ni  
<2x108 ATM/cm3  
Pad surface  
Leak rate  
Notes:  
*ESD sensitive, take appropriate precautions.  
Compensation period: see note on page 2  
Fig 1  
Please note that all parameters can not necessarily be specified in the same device.  
To specify: Please refer to part numbering system appended to the end of this data  
ISO9001 Registered  
For quotations or further information please contact us at:  
3 The Business Centre, Molly Millars Lane, Wokingham, Berkshire, RG41 2EY  
Issue No.  
4 M6  
Date:  
16/10/2013  

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