Datasheet > TCTK751HFCIBH2C-PF

TCTK751HFCIBH2C-PF

更新时间： 2024-11-30 00:04:59

品牌	Logo	应用领域
ACT		石英晶振温度补偿晶振
页数	文件大小	规格书
3页	643K
描述
LOW POWER HCMOS 1/60Hz ~ 32.768kHz TCXO

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TCTK751HFCIBH2C-PF 数据手册

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Tel

Fax:

email:

0044(0)118 979 1238

0044(0)118 979 1283

info@act crystals.com

ACT TCTK75-6 LOW POWER HCMOS 1/60Hz~32.768kHz TCXO

●

Stability:

Accuracy:

Operating current: 400nA typical

±5ppm (-40+85°C)

±1.5ppm

Characteristics

Frequency Range (MHz)

32.768 kHz, 4.096 kHz, 1.024 kHz

128 Hz, 32 Hz 1 Hz ¹/₁₀Hz, ¹/₆₀Hz

1.8, 2.5, 3.0, 3.3, 5.0

-40 ~ +85°C

Supply voltage ±5% Vcc (V_DC)

Operating temperature Top (°C

Operating Current (mA max)

Stabilty v T op (ppm)

Fig 1

±5 (Fig 2)

Stabilty v Vcc(ppm)

Stabilty v Load (ppm)

Stabilty v 1 reflow (ppm)

Aging @25°C (ppm)

Tolerance @ 25°C (ppm)

Load ±10%

±0.2 (±5% change)

±0.2 (±10% change)

±1.0 (24hrs after reflow)

±3 first year max

±1.5

15pF HCMOS

Output voltage (V) (I_OL0.1mA)

V_OHVcc-0.4 min, V_OL0.4V max

Duty Cycle (%)

Start up time (ms, max)

Switching Jitter (ns)

4//60 (kHz range), 45/55 (Hz range )

1 (25°C), 3(85°C)

2000 (kHz range), 0 (Hz range)

Compensation interval (Fig 3)

Pad 1

4 min std, 2min, 1min,0.5min options

Tristate (Enable high)

Rating

Storage temperature (°C)

ESD Sensitivity (KV)*

MSL

-40 ~ 85 max

2 (HBM) IEC 61000-4-2

Level 1 IPC/JEDEC JSTD-020D.1

0.3~1.2µm Au over 1.27~8.89µm Ni

<2x10⁸ATM/cm³

Pad surface

Leak rate

Notes:

*ESD sensitive, take appropriate precautions.

Compensation period: see note on page 2

Fig 1

Please note that all parameters can not necessarily be specified in the same device.

To specify: Please refer to part numbering system appended to the end of this data

ISO9001 Registered

For quotations or further information please contact us at:

3 The Business Centre, Molly Millars Lane, Wokingham, Berkshire, RG41 2EY

Issue No.

4 M6

Date:

16/10/2013

12 3

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