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TC7WZ00FK(TE85L) PDF预览

TC7WZ00FK(TE85L)

更新时间: 2024-11-17 06:24:31
品牌 Logo 应用领域
东芝 - TOSHIBA 输入元件光电二极管逻辑集成电路触发器
页数 文件大小 规格书
7页 193K
描述
IC,LOGIC GATE,DUAL 2-INPUT NAND,LCX/LVC-CMOS,TSSOP,8PIN,PLASTIC

TC7WZ00FK(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TSSOP, TSSOP8,.12,20Reach Compliance Code:unknown
风险等级:5.92JESD-30 代码:R-PDSO-G8
负载电容(CL):50 pF逻辑集成电路类型:NAND GATE
最大I(ol):0.024 A端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.12,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
电源:3.3 VProp。Delay @ Nom-Sup:4.9 ns
认证状态:Not Qualified施密特触发器:NO
子类别:Gates标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

TC7WZ00FK(TE85L) 数据手册

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TC7WZ00FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7WZ00FU,TC7WZ00FK  
Dual 2-Input NAND Gate  
TC7WZ00FU  
Features  
High output current  
: ±24 mA (min) at V  
= 3 V  
CC  
Super high speed operation : t = 2.4 ns (typ.)  
pd  
at V  
= 5 V, 50 pF  
CC  
Operating voltage range  
5.5-V tolerant inputs  
: V  
= 1.65 to 5.5 V  
CC  
5.5-V power down protection outputs  
Matches the performance of TC74LCX series when operated at  
(SM8)  
TC7WZ00FK  
3.3 V V  
.
CC  
Marking  
SM8  
Z 00  
US8  
Product Name  
Lot No.  
WZ  
00  
(US8)  
Weight  
SSOP8-P-0.65  
SSOP8-P-0.50A  
: 0.02 g (typ.)  
: 0.01 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
V
0.5 to 6  
V
V
CC  
Pin Assignment (top view)  
DC input voltage  
V
0.5 to 6  
IN  
0.5 to 6 (Note 1)  
1A  
1
8
V
CC  
DC output voltage  
V
V
OUT  
0.5 to V  
+0.5 (Note 2)  
CC  
1B  
2
3
4
7
6
5
1Y  
2B  
2A  
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
mA  
mA  
mA  
IK  
2Y  
I
20  
(Note 3)  
OK  
I
±50  
±50  
GND  
OUT  
DC V /ground current  
CC  
I
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
D
Storage temperature  
T
65 to 150  
°C  
°C  
stg  
Lead temperature (10s)  
T
260  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: V  
= 0V  
CC  
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.  
Note 3: V < GND  
OUT  
1
2009-09-09  

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