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TC7WZ08FU PDF预览

TC7WZ08FU

更新时间: 2024-11-10 22:49:55
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 145K
描述
2 Input and Gate

TC7WZ08FU 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:SOIC包装说明:LSSOP, TSSOP8,.16
针数:8Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.6
Is Samacsys:N系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G8长度:2.9 mm
负载电容(CL):50 pF逻辑集成电路类型:AND GATE
最大I(ol):0.024 A功能数量:2
输入次数:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSSOP8,.16封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 VProp。Delay @ Nom-Sup:5.2 ns
传播延迟(tpd):11 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.3 mm
子类别:Gates最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2.8 mm
Base Number Matches:1

TC7WZ08FU 数据手册

 浏览型号TC7WZ08FU的Datasheet PDF文件第2页浏览型号TC7WZ08FU的Datasheet PDF文件第3页浏览型号TC7WZ08FU的Datasheet PDF文件第4页浏览型号TC7WZ08FU的Datasheet PDF文件第5页浏览型号TC7WZ08FU的Datasheet PDF文件第6页浏览型号TC7WZ08FU的Datasheet PDF文件第7页 
                                                        
                                                        
TC7WZ08FU/FK  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
Preliminary  
TC7WZ08FU,TC7WZ08FK  
2 Input and Gate  
Features  
TC7WZ08FU  
·
·
High output drive: ±24 mA (min) @V = 3 V  
CC  
Super high speed operation: t 2.4 ns (typ.) @V  
pd  
= 5 V,  
CC  
50 pF  
·
·
·
Operation voltage range: V = 1.65~5.5 V  
CC (opr)  
Latch-up performance: ±500 mA or more  
ESD performance: ±200 V or more (JEITA)  
±2000 V or more (MIL)  
·
·
Power down protection is provided on all inputs and outputs.  
Matches the performance of TC74LCX series when operated  
TC7WZ08FK  
at 3.3 V V  
.
CC  
Marking  
SM8  
Z 08  
US8  
Type name  
Lot No.  
WZ  
08  
Weight  
SSOP8-P-0.65  
SSOP8-P-0.50A  
: 0.02 g (typ.)  
: 0.01 g (typ.)  
Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Symbol  
Rating  
Unit  
Power supply voltage  
DC input voltage  
V
-0.5~6  
-0.5~6  
-0.5~6  
-20  
V
CC  
1A  
1B  
V
CC  
1
2
3
4
8
7
6
5
V
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
V
V
OUT  
1Y  
2B  
2A  
I
mA  
mA  
mA  
mA  
IK  
2Y  
I
-20  
OK  
GND  
I
±50  
OUT  
DC V /ground current  
CC  
I
±50  
CC  
300 (SM8)  
200 (US8)  
Power dissipation  
P
mW  
D
Storage temperature  
T
-65~150  
°C  
°C  
stg  
Lead temperature (10s)  
T
260  
L
1
2002-01-16  

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