Datasheet > TC7SG126FE_11

TC7SG126FE_11

更新时间： 2022-03-18 03:23:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	169K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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TC7SG126FE_11 数据手册

TC7SG126FE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG126FE

Bus Buffer with 3-STATE Output

Features

•

High output current

: ±8 mA (min) at V_CC= 3.0 V

High-speed operation

: t = 2.4 ns (typ.)

at V_CC= 3.3 V, C_L= 15pF

•

Operating voltage range

5.5-V tolerant inputs

: V_CC= 0.9 to 3.6 V

3.6-V power down protection output

ESD performance : Machine model ≥ ±200 V

Human body model ≥ ±2000 V

(ESV)

Weight: 3.0 mg (typ.)

Marking

Pin Assignment (top view)

Product name

G 1

IN A 2

GND 3

5 V

W C

4 OUT Y

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Supply voltage

Symbol

Rating

Unit

−0.5 to 4.6

DC input voltage

−0.5 to 7.0

−0.5 to 4.6 (Note 1)

DC output voltage

OUT

−0.5 to V

+ 0.5 (Note 2)

−20

Input diode current

Output diode current

DC output current

°C

(Note 3)

±25

±50

150

OUT

DC V /ground current

Power dissipation

Storage temperature

−65 to 150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: V_CC= 0V

Note 2: High or Low State. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V_OUT< GND

2011-03-10

12 3 4 5 6 7 8

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