Datasheet > TC7SG08FE_09

TC7SG08FE_09

更新时间： 2022-03-18 03:35:13

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	170K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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TC7SG08FE_09 数据手册

TC7SG08FE

AC Characteristics (unless otherwise specified, Input: t = t = 3 ns)

Ta = 25°C

Typ.

Ta = −40 to 85°C

Symbol

Characteristics

Test Condition

Unit

(V)

Min

⎯

Max

⎯

Min

⎯

Max

⎯

0.9

26.9

1.1 to 1.3

1.4 to 1.6

⎯

10.9

20.7

9.6

1.0

38.6

11.3

⎯

5.9

= 10 pF,

= 1 MΩ

1.65 to

1.95

⎯

4.5

7.0

1.0

7.5

2.3 to 2.7

3.0 to 3.6

0.9

⎯

2.9

2.2

4.4

3.5

1.0

⎯

4.9

4.1

30.0

12.0

6.5

⎯

1.1 to 1.3

1.4 to 1.6

24.2

10.5

1.0

42.0

12.6

pLH

pHL

= 15 pF,

= 1 MΩ

Propagation delay time

1.65 to

1.95

⎯

5.0

7.7

1.0

8.0

2.3 to 2.7

3.0 to 3.6

0.9

⎯

3.2

2.5

4.9

3.8

1.0

⎯

5.6

4.4

45.0

18.0

8.9

⎯

1.1 to 1.3

1.4 to 1.6

33.4

14.8

1.0

63.2

17.9

= 30 pF,

= 1 MΩ

1.65 to

1.95

⎯

6.9

10.3

1.0

10.8

2.3 to 2.7

3.0 to 3.6

3.6

⎯

4.4

3.5

6.4

4.9

⎯

1.0

⎯

6.8

5.4

⎯

Input capacitance

⎯

Power dissipation capacitance

(Note 13) 0.9 to 3.6

⎯

Note 13: C

is defined as the value of the internal equivalent capacitance which is calculated from the operating

current consumption without load.

Average operating current can be obtained by the equation:

= C ･V ･f + I

PD CC IN CC

CC (opr.)

2009-09-09

1 2 345 6

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