Datasheet > TC7SG125FE(TE85L,F)

TC7SG125FE(TE85L,F)

更新时间： 2024-01-17 07:23:54

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动光电二极管逻辑集成电路
页数	文件大小	规格书
8页	162K
描述
IC,BUFFER/DRIVER,SINGLE,1-BIT,CMOS,FP,6PIN,PLASTIC

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技术参数
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TC7SG125FE(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DFP, FL6,.047,20	Reach Compliance Code：	unknown
风险等级：	5.84	控制类型：	ENABLE LOW
JESD-30 代码：	R-PDFP-F6	负载电容（CL）：	30 pF
逻辑集成电路类型：	BUS DRIVER	最大I（ol）：	0.003 A
位数：	1	功能数量：	1
端子数量：	6	最高工作温度：	85 °C
最低工作温度：	-40 °C	输出特性：	3-STATE
输出极性：	TRUE	封装主体材料：	PLASTIC/EPOXY
封装代码：	DFP	封装等效代码：	FL6,.047,20
封装形状：	RECTANGULAR	封装形式：	FLATPACK
包装方法：	TAPE AND REEL	电源：	1.2/3.3 V
Prop。Delay @ Nom-Sup：	56 ns	认证状态：	Not Qualified
子类别：	Bus Driver/Transceivers	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	FLAT	端子节距：	0.5 mm
端子位置：	DUAL	Base Number Matches：	1

TC7SG125FE(TE85L,F) 数据手册

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TC7SG125FE

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG125FE

Bus Buffer with 3-STATE Output

Features

•

High output current:

±8 mA (min) at V

= 3.0 V

High-speed operation:

= 2.4 ns (typ.)

at V

= 3.3 V,15pF

•

Operating voltage range: V

5.5-V tolerant inputs.

= 0.9 to 3.6 V

3.6-V power down protection output.

(ESV)

Weight: 0.003 g (typ.)

Marking

Pin Assignment (top view)

Product name

G 1

5 V

W B

IN A 2

4 OUT Y

GND

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 4.6

−0.5 to 7.0

DC input voltage

−0.5 to 4.6 (Note 1)

DC output voltage

OUT

−0.5 to V

+ 0.5 (Note 2)

Output diode current

DC output current

−20

°C

−20 (Note 3)

±25

DC V /ground current

OUT

Power dissipation

±50

Storage temperature

Power supply voltage

150

−65 to 150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: V_CC= 0V

Note 2: High or Low State. Do not exceed I_OUTof absolute maximum ratings.

Note 3:

OUT

< GND

2009-09-18

12 3 4 5 6 7 8

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