TC7SG125FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG125FE
Bus Buffer with 3-STATE Output
Features
•
•
High-level output current:
I
/I = ±8 mA (min)
OH OL
at V
= 3.0 V
CC
High-speed operation: t = 2.4 ns (typ.)
pd
at V
= 3.3 V,15pF
CC
•
•
•
Operating voltage range: V
5.5-V tolerant inputs.
= 0.9~3.6 V
CC
3.6-V power down protection output.
(ESV)
質量: 0.003 g (標準)
Marking
Pin Assignment (top view)
Product name
G 1
5 V
CC
W B
IN A 2
3
4 OUT Y
GND
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Power supply voltage
Symbol
Value
Unit
V
−0.5~4.6
−0.5~7.0
V
V
CC
DC input voltage
V
IN
−0.5~ 4.6 (Note 1)
−0.5~ V + 0.5 (Note 2)
DC output voltage
V
V
OUT
CC
−20
Output diode current
DC output current
I
IK
mA
mA
mA
mA
mW
°C
I
−20 (Note 3)
±25
OK
DC V /ground current
CC
I
OUT
Power dissipation
I
±50
CC
Storage temperature
Power supply voltage
P
200
D
T
−65~150
stg
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT abusolute maximum rating must be observed.
Note 3:
V
OUT
< GND
1
2007-11-01