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TC7920K6-G PDF预览

TC7920K6-G

更新时间： 2024-09-25 01:21:11
品牌 Logo 应用领域
超科 - SUPERTEX 开关光电二极管晶体管
页数 文件大小 规格书
5页 579K
描述
Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes

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中文翻译

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TC7920K6-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DFN
包装说明：SMALL OUTLINE, R-PDSO-N12针数：12
Reach Compliance Code：compliant风险等级：5.75
其他特性：LOGIC LEVEL COMPATIBLE, LOW THRESHOLD配置：SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：200 V最大漏源导通电阻：7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-N12
元件数量：4端子数量：12
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL AND P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TC7920K6-G 数据手册

 浏览型号TC7920K6-G的Datasheet PDF文件第2页浏览型号TC7920K6-G的Datasheet PDF文件第3页浏览型号TC7920K6-G的Datasheet PDF文件第4页浏览型号TC7920K6-G的Datasheet PDF文件第5页 
Supertex inc.  
TC7920  
Two Pair, N- and P-Channel  
Enhancement-Mode MOSFET with Drain-Diodes  
Features  
General Description  
► High voltage Vertical DMOS technology  
► Integrated drain output high voltage diodes  
► Integrated gate-to-source resistor  
► Integrated gate-to-source Zener diode  
► Low threshold, Low on-resistance  
► Low input & output capacitance  
The Supertex TC7920 consists of two pairs of high voltage, low  
threshold N-channel and P-channel MOSFETs in a 12-Lead  
DFN package. All MOSFETs have integrated the output drain  
high voltage diodes, gate-to-source resistors and gate-to-source  
Zener diode clamps which are desired for high voltage pulser  
applications. The complimentary, high-speed, high voltage, gate-  
clamped N and P-channel MOSFET pairs utilize an advanced  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces a device with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inherent  
in MOS devices.  
► Fast switching speeds  
► Electrically isolated N- and P-MOSFET pairs  
Applications  
► High voltage pulsers  
► Amplifiers  
► Buffers  
Characteristic of all MOS structures, these devices are free from  
thermal runaway and thermally induced secondary breakdown.  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, high breakdown voltage, high input impedance, low input  
and output capacitance, and fast switching speeds are desired.  
► Piezoelectric transducer drivers  
► General purpose line drivers  
► Logic level interfaces  
Typical Application Circuit  
VPP  
+100V  
+10V  
0.47µF  
1.0µF  
0.1µF  
VDD  
OE  
VH  
ENAB  
OUTA  
INA  
+PULSE  
1.8 to 5.0V  
Logic Imputs  
VNN  
OUTB  
INB  
INC  
-100V  
-PULSE  
DAMP  
OUTC  
OUTD  
1.0µF  
IND  
GND  
VSS  
VL  
Supertex  
MD1822  
10nF  
Supertex  
TC7920  
Doc.# DSFP-TC7920  
B080613  
Supertex inc.  
www.supertex.com  
12345

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