是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DFN |
包装说明: | SMALL OUTLINE, R-PDSO-N12 | 针数: | 12 |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
其他特性: | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | 配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 200 V | 最大漏源导通电阻: | 7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-N12 |
元件数量: | 4 | 端子数量: | 12 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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