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TC7920K6-G PDF预览

TC7920K6-G

更新时间: 2024-11-24 01:21:11
品牌 Logo 应用领域
超科 - SUPERTEX 开关光电二极管晶体管
页数 文件大小 规格书
5页 579K
描述
Two Pair, N- and P-Channel Enhancement-Mode MOSFET with Drain-Diodes

TC7920K6-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DFN
包装说明:SMALL OUTLINE, R-PDSO-N12针数:12
Reach Compliance Code:compliant风险等级:5.75
其他特性:LOGIC LEVEL COMPATIBLE, LOW THRESHOLD配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:200 V最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N12
元件数量:4端子数量:12
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TC7920K6-G 数据手册

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Supertex inc.  
TC7920  
Two Pair, N- and P-Channel  
Enhancement-Mode MOSFET with Drain-Diodes  
Features  
General Description  
High voltage Vertical DMOS technology  
Integrated drain output high voltage diodes  
Integrated gate-to-source resistor  
Integrated gate-to-source Zener diode  
Low threshold, Low on-resistance  
Low input & output capacitance  
The Supertex TC7920 consists of two pairs of high voltage, low  
threshold N-channel and P-channel MOSFETs in a 12-Lead  
DFN package. All MOSFETs have integrated the output drain  
high voltage diodes, gate-to-source resistors and gate-to-source  
Zener diode clamps which are desired for high voltage pulser  
applications. The complimentary, high-speed, high voltage, gate-  
clamped N and P-channel MOSFET pairs utilize an advanced  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces a device with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inherent  
in MOS devices.  
Fast switching speeds  
Electrically isolated N- and P-MOSFET pairs  
Applications  
High voltage pulsers  
Amplifiers  
Buffers  
Characteristic of all MOS structures, these devices are free from  
thermal runaway and thermally induced secondary breakdown.  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, high breakdown voltage, high input impedance, low input  
and output capacitance, and fast switching speeds are desired.  
Piezoelectric transducer drivers  
General purpose line drivers  
Logic level interfaces  
Typical Application Circuit  
VPP  
+100V  
+10V  
0.47µF  
1.0µF  
0.1µF  
VDD  
OE  
VH  
ENAB  
OUTA  
INA  
+PULSE  
1.8 to 5.0V  
Logic Imputs  
VNN  
OUTB  
INB  
INC  
-100V  
-PULSE  
DAMP  
OUTC  
OUTD  
1.0µF  
IND  
GND  
VSS  
VL  
Supertex  
MD1822  
10nF  
Supertex  
TC7920  
Doc.# DSFP-TC7920  
B080613  
Supertex inc.  
www.supertex.com  

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