是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP24,.6 | Reach Compliance Code: | unknown |
风险等级: | 5.82 | Is Samacsys: | N |
最长访问时间: | 200 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDIP-T24 | JESD-609代码: | e0 |
内存密度: | 16384 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 端子数量: | 24 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 2KX8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP24,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.000001 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.03 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC551801ECB713 | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551801ECBTR | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551801EMB713 | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551801EMBTR | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551801EZB713 | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551801EZBTR | MICROCHIP |
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1 レA Low Dropout Positive Voltage Regulator |
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TC551802ECB713 | MICROCHIP |
获取价格 |
1 レA Low Dropout Positive Voltage Regulator |
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TC551802ECBTR | MICROCHIP |
获取价格 |
1 レA Low Dropout Positive Voltage Regulator |
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TC551802EMB713 | MICROCHIP |
获取价格 |
1 レA Low Dropout Positive Voltage Regulator |
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TC551802EMBTR | MICROCHIP |
获取价格 |
1 レA Low Dropout Positive Voltage Regulator |
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