是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | SOJ |
包装说明: | SOJ, SOJ40,.44 | 针数: | 40 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 35 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDSO-J40 | JESD-609代码: | e0 |
长度: | 26.04 mm | 内存密度: | 524288 bit |
内存集成电路类型: | CACHE SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 40 |
字数: | 32768 words | 字数代码: | 32000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 32KX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装等效代码: | SOJ40,.44 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 240 |
电源: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 3.7 mm | 最大待机电流: | 0.001 A |
最小待机电流: | 4.5 V | 子类别: | SRAMs |
最大压摆率: | 0.17 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC551664AJ | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664AJ-12 | TOSHIBA |
获取价格 |
IC 128K X 8 CACHE SRAM, 12 ns, PDSO44, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-44, Static | |
TC551664AJ-15 | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664AJ-15EL | TOSHIBA |
获取价格 |
IC 64K X 16 CACHE SRAM, 15 ns, PDSO44, 0.400 INCH, PLASTIC, SOJ-44, Static RAM | |
TC551664AJ-20 | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664AJ-20EL | TOSHIBA |
获取价格 |
IC 64K X 16 CACHE SRAM, 20 ns, PDSO44, 0.400 INCH, PLASTIC, SOJ-44, Static RAM | |
TC551664BFT-12 | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664BFT-15 | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664BJ | TOSHIBA |
获取价格 |
65,536-WORD BY 16-BIT CMOS STATIC RAM | |
TC551664BJ-10 | TOSHIBA |
获取价格 |
IC 64K X 16 CACHE SRAM, 10 ns, PDSO44, 0.400 INCH, PLASTIC, SOJ-44, Static RAM |