Datasheet > TC4W66FU_08

TC4W66FU_08

更新时间： 2024-11-12 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
8页	278K
描述
Dual Bilateral Switch

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中文翻译

获取价格

数据手册

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TC4W66FU_08 数据手册

TC4W66F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC4W66F,TC4W66FU

Dual Bilateral Switch

The TC4W66 contains two independence circuits of

bidirectional switches.

When control input CONT is set to “H” level, the impedance

between input and output of the switch becomes low and when it

is set to “L” level, the switch becomes high. This can be applied

for switching of analog signals and digital signals.

TC4W66F

TC4W66FU

Weight

Features

•

ON-resistance, R

250 Ω (typ.)................... V

110 Ω (typ.)................... V

70 Ω (typ.)..................... V

− V = 5 V

− V = 10 V

− V = 15 V

•

OFF-resistance, R

OFF

(typ.) > 10⁹Ω

SOP8-P-1.27: 0.05 g (typ.)

SSOP8-P-0.65: 0.02 g (typ.)

Absolute Maximum Ratings

Characteristics

DC supply voltage

Symbol

Rating

− 0.5 to V + 20

Unit

Control input voltage

Switch I/O voltage

− 0.5 to V

300

+ 0.5

C IN

I/O

Power dissipation

Potential difference across I/O during

V -V

±0.5

±10

Control input current

Operating temperature range

Storage temperature

Lead temp./time

°C

C IN

opr

−40 to 85

stg

−65 to 150

°C

260°C/10 s

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

TC4W66F

TC4W66FU

2007-11-01

12 3 4 5 6 7 8

中文翻译

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