是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | 0.300 INCH, LEAD FREE, MS-030, CERDIP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5 |
Is Samacsys: | N | 高边驱动器: | YES |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-GDIP-T8 |
JESD-609代码: | e1 | 长度: | 9.78 mm |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
标称输出峰值电流: | 1.5 A | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 4.5/18 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 18 V |
最小供电电压: | 4.5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.035 µs |
接通时间: | 0.035 µs | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
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