Datasheet > TC1304P0811

TC1304P0811

更新时间： 2024-10-28 19:46:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
6页	258K
描述
RF Small Signal Field-Effect Transistor

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TC1304P0811 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

TC1304P0811 数据手册

TC1304

REV5_20070502

Low Noise and Medium Power GaAs FETs

FEATURES

PHOTO ENLARGEMENT

ꢀ Low Noise Figure: NF = 0.8 dB Typical at 12 GHz

ꢀ High Associated Gain: Ga = 11 dB Typical at 12 GHz

ꢀ High Dynamic Range: 1 dB Compression Power P_-1= 24.5 dBm at 12 GHz

ꢀ Breakdown Voltage: BV_DGO≥ 9 V

ꢀ Lg = 0.25 µm, Wg = 600 µm

ꢀ All-Gold Metallization for High Reliability

ꢀ Tight Vp ranges control

ꢀ High RF input power handling capability

ꢀ 100 % DC Tested

DESCRIPTION

The TC1304 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low

noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 30 GHz and

suitable for low noise and medium power amplifier applications including a wide range of commercial and

military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated

for either thermo-compression or thermo-sonic wire bonding.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN

TYP

0.8

MAX

UNIT

Symbol

Conditions

1.0

Noise Figure at V_DS= 4 V, I_DS= 50 mA, f = 12GHz

Associated Gain at V_DS= 4 V, I_DS= 50 mA, f = 12GHz

Output Power at 1dB Gain Compression Point, f = 12GHz, V_DS= 6 V, I_DS= 80 mA

Linear Power Gain, f = 12GHz, V_DS= 6 V, I_DS= 80 mA

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

23.5

G_a

24.5

dBm

P_1dB

G_L

180

200

-1.0*

I_DSS

g_m

Volts

°C/W

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 1.2 mA

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 0.3 mA

R_thThermal Resistance

Note: * For the tight control of the pinch-off voltage . TC1304’s are divided into 3 groups:

(1) TC1304P0710 : Vp = -0.7V to -1.0V (2) TC1304P0811 : Vp = -0.8V to -1.1V (3) TC1304P0912 : Vp = -0.9V to -1.2V

In addition, the customers may specify their requirements.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

1 / 6

Fax: 886-6-5051602

12 3 4 5 6

中文翻译

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与TC1304P0811相关器件

型号	品牌	获取价格	描述	数据表
TC1304P0912	TRANSCOM	获取价格	RF Small Signal Field-Effect Transistor
TC1304-PA0EMF	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 0.9 MM HEIGHT, P
TC1304-PA0EUN	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, PLASTIC, MO-187, MSOP-10
TC1304-PA1EMFTR	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 0.9 MM HEIGHT, P
TC1304-PA1EUN	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, PLASTIC, MO-187, MSOP-10
TC1304-PA1EUNTR	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, PLASTIC, MO-187, MSOP-10
TC1304-PA2EMF	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 0.9 MM HEIGHT, P
TC1304-PA2EUNTR	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, PLASTIC, MO-187, MSOP-10
TC1304-PA3EUNTR	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, PLASTIC, MO-187, MSOP-10
TC1304-PB0EMF	MICROCHIP	获取价格	0.5 A SWITCHING REGULATOR, 2400 kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 0.9 MM HEIGHT, P

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