Datasheet > TC1301

TC1301

更新时间： 2024-11-29 22:49:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	209K
描述
Low Noise and Medium Power GaAs FETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TC1301 数据手册

TC1301

REV.2_04/12/2004

Low Noise and Medium Power GaAs FETs

FEATURES

•

Low Noise Figure:

NF = 0.8 dB Typical at 12 GHz

High Associated Gain:

Ga = 10 dB Typical at 12 GHz

High Dynamic Range:

1 dB Compression Power P_-1= 24 dBm at 12 GHz

Breakdown Voltage:

PHOTO ENLARGEMENT

BV_DGO≥ 9 V

•

Lg = 0.25 µm, Wg = 600 µm

All-Gold Metallization for High Reliability

100 % DC Tested

DESCRIPTION

The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very

low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40

GHz and suitable for low noise and medium power amplifier applications including a wide range of

commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond

pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN

TYP

0.8

MAX

UNIT

Symbol

CONDITIONS

1.0

Noise Figure at V_DS= 4 V, I_DS= 50 mA, f = 12GHz

Associated Gain at V_DS= 4 V, I_DS= 50 mA, f = 12GHz

Output Power at 1dB Gain Compression Point , f = 12GHz

V_DS= 6 V, I_DS= 80 mA

G_a

P_1dB

dBm

G_L

Linear Power Gain, f = 12GHz

Volts

°C/W

V_DS= 6 V, I_DS= 80 mA

180

200

-1.0*

I_DSS

g_m

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

Pinch-off Voltage at V_DS= 2 V, I_D= 1.2 mA

Drain-Gate Breakdown Voltage at I_DGO=0.3 mA

Thermal Resistance

V_P

BV_DGO

R_th

* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement

(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for

details.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 6

Fax: 886-6-5051602

12 3 4 5 6

中文翻译

下载PDF

与TC1301相关器件

型号	品牌	获取价格	描述	数据表
TC1301A	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A_08	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-AAAVMFTR	MICROCHIP	获取价格	DUAL LDO W/MICROCONTROLLER WITHOUT RESET FUNCTION, -40C to +125C, 8-DFN, T/R
TC1301A-AAAVUATR	MICROCHIP	获取价格	DUAL LDO W/MICROCONTROLLER WITHOUT RESET FUNCTION, -40C to +125C, 8-MSOP, T/R
TC1301A-ADAVMF	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-ADAVMFTR	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-ADAVUA	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-ADAVUATR	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-APAVMF	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function
TC1301A-APAVMFTR	MICROCHIP	获取价格	Dual LDO with Microcontroller RESET Function

与TC1301相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

TC1301

TC1301 数据手册

与TC1301相关器件

与TC1301相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TC1301

TC1301 数据手册

与TC1301相关器件

与TC1301相关文章

您还可以找

您在本页遇到什么问题？