Datasheet > TC1101V

TC1101V

更新时间： 2024-11-08 12:23:59

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	90K
描述
Low Noise and Medium Power GaAs FETs

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TC1101V 数据手册

TC1101V

REV6_20070502

Low Noise and Medium Power GaAs FETs

FEATURES

ꢀ

Via holes for source grounding

PHOTO ENLARGEMENT

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz

High Associated Gain: Ga = 13 dB Typical at 12 GHz

High Dynamic Range: 1 dB Compression Power P_-1= 18.5 dBm at 12 GHz

Breakdown Voltage: BV_DGO≥ 9 V

Lg = 0.25 µm, Wg = 160 µm

All-Gold Metallization for High Reliability

Tight Vp ranges control

High RF input power handling capability

100 % DC Tested

DESCRIPTION

The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It

can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including

a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality.

All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

MIN

TYP

0.5

MAX

UNIT

Symbol

Conditions

Noise Figure at V_DS= 2 V, I_DS= 10 mA, f = 12GHz

Associated Gain at V_DS= 2 V, I_DS= 10 mA, f = 12GHz

Output Power at 1dB Gain Compression Point, f = 12GHz, V_DS= 6 V, I_DS= 25 mA

Linear Power Gain, f = 12GHz, V_DS= 6 V, I_DS= 25 mA

Saturated Drain-Source Current at V_DS= 2 V, V_GS= 0 V

Transconductance at V_DS= 2 V, V_GS= 0 V

0.7

G_a

17.5

P_1dB

G_L

18.5

dBm

I_DSS

g_m

V_P

Pinch-off Voltage at V_DS= 2 V, I_D= 0.32 mA

-1.0*

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO=0.08 mA

R_thThermal Resistance

180

Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups:

(1)TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V

(3)TC1101VP0912 : Vp = -0.9V to -1.2V

In addition, the customers may specify their requirements.

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C) TYPICAL NOISE PARAMETERS (T_A=25 °C)

V_DS= 2 V, I_DS= 10 mA

Frequency

(GHz)

NF_opt

(dB)

G_A

(dB)

Γ_opt

MAG

Symbol

V_DS

V_GS

I_DS

Parameter

Rating

7.0 V

Rn/50

ANG

Drain-Source Voltage

Gate-Source Voltage

Drain Current

0.34

0.36

0.38

0.42

0.48

0.54

0.63

0.76

0.94

21.2

19.3

17.5

15.9

14.4

13.2

12.7

12.5

12.2

0.97

0.63

0.54

0.42

0.30

0.18

0.14

0.12

0.17

0.36

-3.0 V

I_DSS

0.83

0.68

0.51

0.38

0.28

0.25

0.31

0.49

I_GS

Gate Current

160 µA

18 dBm

250 mW

P_in

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

106

145

-168

-111

-45

P_T

T_CH

T_STG

175 C

- 65 C to +175 C

° °

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

1/2

Fax: 886-6-5051602

中文翻译

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