T810-600K

更新时间： 2024-11-09 13:02:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅三端双向交流开关
页数	文件大小	规格书
5页	105K
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数据手册

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T810-600K 数据手册

T810-xxxB

T835-xxxB

HIGH PERFORMANCE TRIACS

FEATURES

I_TRMS= 8 A

SENSITIVE GATE : I_{GT ≤}10mA and 35mA

HIGH COMMUTATION TECHNOLOGY

HIGH I_TSMCAPABILITY

DESCRIPTION

The T810-xxxB and T835-xxxB series are using

high performance TOPGLASS PNPN technology.

These devices are intented for AC control applica-

tions, using surface mount technology where high

commutating and surge performances are re-

quired (like power tools, Solid State Relay).

DPAK

(Plastic)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

I_T(RMS)

Tc =110 °C

RMS on-state current

(360° conduction angle)

I_TSM

tp = 8.3 ms

tp = 10 ms

Non repetitive surge peak on-state current

( Tj initial = 25°C )

I²t

A²s

I²t value for fusing

dI/dt

Repetitive

F = 50 Hz

A/µs

Critical rate of rise of on-state current

I_G= 50mA di_G/dt = 0.1A/µs

Non

100

Repetitive

Tstg

- 40 to + 150

- 40 to + 125

°C

Storage temperature range

Operating junction temperature range

260

°C

Maximum temperature for soldering during 10 s

Symbol

Parameter

T810-/T835-

Unit

400B

400

600B

600

V_DRM

V_RRM

Repetitive peak off-state voltage

Tj = 125 °C

1/5

May 1998 Ed : 1A

12 3 4 5

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