5秒后页面跳转
T68K1MBI-8 PDF预览

T68K1MBI-8

更新时间: 2024-11-05 06:15:11
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
14页 145K
描述
Low Power 1M (128Kx8)-Bits Static RAM

T68K1MBI-8 数据手册

 浏览型号T68K1MBI-8的Datasheet PDF文件第2页浏览型号T68K1MBI-8的Datasheet PDF文件第3页浏览型号T68K1MBI-8的Datasheet PDF文件第4页浏览型号T68K1MBI-8的Datasheet PDF文件第5页浏览型号T68K1MBI-8的Datasheet PDF文件第6页浏览型号T68K1MBI-8的Datasheet PDF文件第7页 
T68 K/S/R 1M Family  
Low Power 1M (128Kx8)-Bits Static RAM  
¢
DESCRIPTION  
The T68K1M, T68S1M, and T68R1M device family is a low power and high performance  
CMOS SRAM organized as 131,072 words by 8 bits. It operates from 2.7V to 3.6V, 2.2V to  
2.7V, and 1.65V to 2.2V. Easy memory expansion is provided by an active LOW chip enable 1  
(/CE1), active HIGH chp enable 2 (CE2) and active LOW output enable (/OE) and three-state  
I/O drivers. Four control pins (/CE1, CE2, /OE, and /WE) fully control the operation mode of the  
T68 K/S/R 1M device family. An active LOW write enable signal (/WE active low) controls the  
write/read operation of the memory. When /CE1 and /WE inputs go LOW and CE2 input goes  
HIGH simultaneously, the device is in write mode and data on the 8 data pins (IO1~IO8) is  
written into the memory location specified by the address on address pins (A0~A16). When  
/CE1 and /OE inputs go LOW and CE2 and /WE input stay in HIGH state, the device is in read  
mode and data in the specified memory address is driven onto the 8 data pins. The 8 data pins  
will be in high-impedance state if both /OE and /WE pins are in HIGH (inactive) state. The T68  
K/S/R 1M device family has an automatically power-down feature when the chip is deselected  
(/CE1 pin HIGH or CE2 pin LOW). The T68 K/S/R 1M device family is available in JEDEC  
standard 32-pin 450-mil SOP, 32-pin 8mmx20mm plastic TSOP, 32-pin 8mmx13.4mm plastic  
STSOP, and 36-ball 6mmx8mm BGA package, also for DICE.  
¢
FEATURES  
Operation voltage……………… T68K1M…………………………….................2.7V ~ 3.6V  
T68S1M……………………………………….. 2.2V ~ 2.7V  
T68R1M………………………….................. 1.65V ~ 2.2V  
Low active power and standby power  
High access times: 70ns/85ns/100ns  
TTL-compatible inputs and outputs  
Easy memory expansion with /CE1, CE2 and /OE  
Low data retention voltage…………………………..2.0V (for K), 1.5V (for S), 1.0V (for R)  
Auto power down when deselected  
2003-REV 090  
15  
TIWIN Semiconductor · www.tiwin.com.tw · Tel :(886)-3-5636031 · Fax:(886)-3-5644823  

与T68K1MBI-8相关器件

型号 品牌 获取价格 描述 数据表
T68K1MDC-7 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MDC-8 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MDE-7 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MDE-8 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MDI-7 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MDI-8 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MGC-7 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MGC-8 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MGE-7 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM
T68K1MGE-8 ETC

获取价格

Low Power 1M (128Kx8)-Bits Static RAM